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IRFZ48VS

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鍨嬭櫉
渚涙噳鍟�
鏁搁噺
寤犲晢
灏佽
鎵硅櫉
鍍规牸
瑾槑
鎿嶄綔

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鎮ㄦ槸涓嶆槸瑕佹壘锛� IRFZ48VSTRLPBF IRFZ48Z IRFZ48ZL IRFZ48ZLPBF IRFZ48ZPBF IRFZ48ZS IRFZ48ZSPBF IRG4BAC50W-S IRG4BAC50W-SPBF

IRFZ48VS PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

IRFZ48VS PDF涓嬭級

鍔熻兘鎻忚堪
MOSFET N-CH 60V 72A D2PAK
RoHS
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椤炲垾
鍒嗛洟寮忓崐灏庨珨鐢㈠搧 >> FET - 鍠�
绯诲垪
HEXFET®
妯欐簴鍖呰
1,000
绯诲垪
MESH OVERLAY™
FET 鍨�
MOSFET N 閫氶亾锛岄噾灞哀鍖栫墿
FET 鐗归粸
閭忚集闆诲钩闁€
婕忔サ鑷虫簮妤甸浕澹�(Vdss)
200V
闆绘祦 - 閫ｇ簩婕忔サ(Id) @ 25° C
18A
闁嬫厠Rds锛堟渶澶э級@ Id, Vgs @ 25° C
180 姣瓙 @ 9A锛�10V
Id 鏅傜殑 Vgs(th)锛堟渶澶э級
4V @ 250µA
闁橀浕鑽�(Qg) @ Vgs
72nC @ 10V
杓稿叆闆诲 (Ciss) @ Vds
1560pF @ 25V
鍔熺巼 - 鏈€澶�
40W
瀹夎椤炲瀷
閫氬瓟
灏佽/澶栨
TO-220-3 鏁村寘
渚涙噳鍟嗚ō鍌欏皝瑁�
TO-220FP
鍖呰
绠′欢

IRFZ48VS 鎶€琛撳弮鏁�

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