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ISL60002CIH312Z-TK

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寤犲晢
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鎵硅櫉
鍍规牸
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ISL60002CIH312Z-TK PDF涓嬭級

鍔熻兘鎻忚堪
IC VREF SERIES PREC SOT-23-3
RoHS
鏄�
椤炲垾
闆嗘垚闆昏矾 (IC) >> PMIC - 闆诲鍩烘簴
绯诲垪
FGA™
妯欐簴鍖呰
1
绯诲垪
-
鍩烘簴椤炲瀷
鏃佽矾锛屽彲瑾跨瘈(ji茅)锛岀簿搴�
杓稿嚭闆诲
2.495 V ~ 36 V
瀹瑰樊
±1%
婧害绯绘暩
妯欐簴鍊� 34ppm/°C
杓稿叆闆诲
2.495 V ~ 36 V
閫氶亾鏁�
1
闆绘祦 - 闄版サ
1mA
闆绘祦 - 闈滄厠(t脿i)
-
闆绘祦 - 杓稿嚭
100mA
宸ヤ綔婧害
-40°C ~ 85°C
瀹夎椤炲瀷
琛ㄩ潰璨艰
灏佽/澶栨
TO-236-3锛孲C-59锛孲OT-23-3
渚涙噳鍟嗚ō鍌欏皝瑁�
SOT-23-3
鍖呰
鍓垏甯� (CT)
鐢㈠搧鐩寗闋侀潰
1073 (CN2011-ZH PDF)
鍏跺畠鍚嶇ū
296-17329-1

ISL60002CIH312Z-TK 鎶€琛撳弮鏁�

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