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JAN1N4970C

閰嶅柈灏堝浼佹キ鍚嶅柈

鍨嬭櫉
渚涙噳鍟�
鏁搁噺
寤犲晢
灏佽
鎵硅櫉
鍍规牸
瑾槑
鎿嶄綔

JAN1N4970C
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Microchip Technology
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JAN1N4970C PDF涓嬭級

鍔熻兘鎻忚堪
Zener Diode 33V 5W 卤2% Through Hole E, Axial
鍒堕€犲晢
microsemi ire division
绯诲垪
杌嶇敤锛孧IL-PRF-19500/356
鍖呰
鏁ｈ
闆朵欢鐙€鎱�
鍦ㄥ敭
闆诲 - 榻婄磵锛堟绋卞€硷級锛圴z锛�
33V
瀹瑰樊
卤2%
鍔熺巼 - 鏈€澶у€�
5W
闃绘姉锛堟渶澶у€硷級锛圸zt锛�
10 姝愬
涓嶅悓?Vr 鏅傜殑闆绘祦 - 鍙嶅悜婕忛浕娴�
2渭A @ 25.1V
涓嶅悓 If 鏅傜殑闆诲 - 姝ｅ悜锛圴f锛�
1.5V @ 1A
宸ヤ綔婧害
-65掳C ~ 175掳C
瀹夎椤炲瀷
閫氬瓟
灏佽/澶栨
E锛岃桓鍚�
渚涙噳鍟嗗櫒浠跺皝瑁�
E锛岃桓鍚�
妯欐簴鍖呰
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