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JAN1N4989C

閰嶅柈灏堝浼佹キ鍚嶅柈

鍨嬭櫉
渚涙噳鍟�
鏁搁噺
寤犲晢
灏佽
鎵硅櫉
鍍规牸
瑾槑
鎿嶄綔

JAN1N4989C
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鑱郴浜猴細寮靛皬濮�/Vivianvi
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Microchip Technology
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鎮ㄦ槸涓嶆槸瑕佹壘锛� JAN1N4989CUS JAN1N4989D JAN1N4989DUS JAN1N4989US JAN1N4990 JAN1N4990C JAN1N4990CUS JAN1N4990D JAN1N4990DUS

JAN1N4989C PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

JAN1N4989C PDF涓嬭級

鍔熻兘鎻忚堪
Zener Diode 200V 5W 卤2% Through Hole E, Axial
鍒堕€犲晢
microsemi ire division
绯诲垪
杌嶇敤锛孧IL-PRF-19500/356
鍖呰
鏁ｈ
闆朵欢鐙€鎱�
鍦ㄥ敭
闆诲 - 榻婄磵锛堟绋卞€硷級锛圴z锛�
200V
瀹瑰樊
卤2%
鍔熺巼 - 鏈€澶у€�
5W
闃绘姉锛堟渶澶у€硷級锛圸zt锛�
500 姝愬
涓嶅悓?Vr 鏅傜殑闆绘祦 - 鍙嶅悜婕忛浕娴�
2渭A @ 152V
涓嶅悓 If 鏅傜殑闆诲 - 姝ｅ悜锛圴f锛�
1.5V @ 1A
宸ヤ綔婧害
-65掳C ~ 175掳C
瀹夎椤炲瀷
閫氬瓟
灏佽/澶栨
E锛岃桓鍚�
渚涙噳鍟嗗櫒浠跺皝瑁�
E锛岃桓鍚�
妯欐簴鍖呰
1

JAN1N4989C 鎶€琛撳弮鏁�

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