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JAN1N5518CUR-1

閰嶅柈灏堝浼佹キ鍚嶅柈

鍨嬭櫉
渚涙噳鍟�
鏁搁噺
寤犲晢
灏佽
鎵硅櫉
鍍规牸
瑾槑
鎿嶄綔

JAN1N5518CUR-1
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Microchip Technology
DO-213AA
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鎮ㄦ槸涓嶆槸瑕佹壘锛� JAN1N5518D-1 JAN1N5518DUR-1 JAN1N5519B-1 JAN1N5519BUR-1 JAN1N5519C-1 JAN1N5519CUR-1 JAN1N5519D-1 JAN1N5519DUR-1 JAN1N5520B-1

JAN1N5518CUR-1 PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

JAN1N5518CUR-1 PDF涓嬭級

鍔熻兘鎻忚堪
Zener Diode 3.3V 500mW 卤2% Surface Mount
鍒堕€犲晢
microsemi ire division
绯诲垪
杌嶇敤锛孧IL-PRF-19500/437
鍖呰
鏁ｈ
闆朵欢鐙€鎱�
鍦ㄥ敭
闆诲 - 榻婄磵锛堟绋卞€硷級锛圴z锛�
3.3V
瀹瑰樊
卤2%
鍔熺巼 - 鏈€澶у€�
500mW
闃绘姉锛堟渶澶у€硷級锛圸zt锛�
26 姝愬
涓嶅悓?Vr 鏅傜殑闆绘祦 - 鍙嶅悜婕忛浕娴�
5渭A @ 1V
涓嶅悓 If 鏅傜殑闆诲 - 姝ｅ悜锛圴f锛�
1.1V @ 200mA
宸ヤ綔婧害
-65掳C ~ 175掳C
瀹夎椤炲瀷
琛ㄩ潰璨艰
灏佽/澶栨
DO-213AA锛堢幓鐠冿級
渚涙噳鍟嗗櫒浠跺皝瑁�
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妯欐簴鍖呰
1

JAN1N5518CUR-1 鎶€琛撳弮鏁�

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