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JAN1N5529D-1

閰嶅柈灏堝浼佹キ(y猫)鍚嶅柈

鍨嬭櫉(h脿o)
渚涙噳(y墨ng)鍟�
鏁�(sh霉)閲�
寤犲晢
灏佽
鎵硅櫉(h脿o)
鍍�(ji脿)鏍�
瑾槑
鎿嶄綔

JAN1N5529D-1
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Microchip Technology
DO-204AH
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鎮ㄦ槸涓嶆槸瑕佹壘锛� JAN1N5529DUR-1 JAN1N5530B-1 JAN1N5530BUR-1 JAN1N5530C-1 JAN1N5530CUR-1 JAN1N5530D-1 JAN1N5530DUR-1 JAN1N5531B-1 JAN1N5531BUR-1

JAN1N5529D-1 PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ(sh铆)闅汸DF鐐烘簴(zh菙n)

JAN1N5529D-1 PDF涓嬭級

鍔熻兘鎻忚堪
Zener Diode 9.1V 500mW 卤1% Through Hole DO-35 (DO-204AH)
鍒堕€犲晢
microsemi ire division
绯诲垪
杌嶇敤锛孧IL-PRF-19500/437
鍖呰
鏁ｈ
闆朵欢鐙€鎱�(t脿i)
鍦ㄥ敭
闆诲 - 榻婄磵锛堟(bi膩o)绋卞€硷級锛圴z锛�
9.1V
瀹瑰樊
卤1%
鍔熺巼 - 鏈€澶у€�
500mW
闃绘姉锛堟渶澶у€硷級锛圸zt锛�
45 姝愬
涓嶅悓?Vr 鏅�(sh铆)鐨勯浕娴� - 鍙嶅悜婕忛浕娴�
100nA @ 8.2V
涓嶅悓 If 鏅�(sh铆)鐨勯浕澹� - 姝ｅ悜锛圴f锛�
1.1V @ 200mA
宸ヤ綔婧害
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瀹夎椤炲瀷
閫氬瓟
灏佽/澶栨
DO-204AH锛孌O-35锛岃桓鍚�
渚涙噳(y墨ng)鍟嗗櫒浠跺皝瑁�
DO-35锛圖O-204AH锛�
妯�(bi膩o)婧�(zh菙n)鍖呰
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