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SIT8008BC-23-33E-48.900000G

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SIT8008BC-23-33E-48.900000G
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SIT8008BC-23-33E-48.900000G PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

SIT8008BC-23-33E-48.900000G PDF涓嬭級

鍔熻兘鎻忚堪
OSC MEMS 48.9000MHZ LVCMOS SMD
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sitime
绯诲垪
SiT8008B
鍖呰
鍓垏甯讹紙CT锛�
闆朵欢鐙€鎱�
鍦ㄥ敭
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闋荤巼
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鍟熺敤/绂佺敤
杓稿嚭
LVCMOS
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3.3V
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宸ヤ綔婧害
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闆绘祦 - 闆绘簮锛堟渶澶у€硷級
4.5mA
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琛ㄩ潰璨艰
灏佽/澶栨
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SIT8008BC-23-33E-48.900000G 鎶€琛撳弮鏁�

SIT8008BC-23-33E-48.000000G 鍔熻兘鎻忚堪:OSC MEMS 48.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:48MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BC-23-33E-46.977848G 鍔熻兘鎻忚堪:OSC MEMS 46.977848MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:46.977848MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BC-23-33E-46.080000G 鍔熻兘鎻忚堪:OSC MEMS 46.0800MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:46.08MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BC-23-33E-41.208000G 鍔熻兘鎻忚堪:OSC MEMS 41.2080MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:41.208MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BC-23-33E-4.000000G 鍔熻兘鎻忚堪:OSC MEMS 4.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:4MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BC-23-33E-56.649758G SIT8008BC-23-33E-56.650000D SIT8008BC-23-33E-56.650000E SIT8008BC-23-33E-58.632099D SIT8008BC-23-33E-58.632099E SIT8008BC-23-33E-58.632099G SIT8008BC-23-33E-59.000000E SIT8008BC-23-33E-59.300000D SIT8008BC-23-33E-59.300000E SIT8008BC-23-33E-60.000000E SIT8008BC-23-33E-62.300000D SIT8008BC-23-33E-62.300000E SIT8008BC-23-33E-64.300000D SIT8008BC-23-33E-64.300000E SIT8008BC-23-33E-64.800000D SIT8008BC-23-33E-64.800000E SIT8008BC-23-33E-65.300000D SIT8008BC-23-33E-65.300000E