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SIT8008BI-11-33E-48.000000G

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SIT8008BI-11-33E-48.000000G
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SIT8008BI-11-33E-48.000000G PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

SIT8008BI-11-33E-48.000000G PDF涓嬭級

鍔熻兘鎻忚堪
OSC MEMS 48.0000MHZ LVCMOS SMD
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sitime
绯诲垪
SiT8008B
鍖呰
鍓垏甯讹紙CT锛�
闆朵欢鐙€鎱�
鍦ㄥ敭
椤炲瀷
MEMS锛堢锛�
闋荤巼
48MHz
鍔熻兘
鍟熺敤/绂佺敤
杓稿嚭
LVCMOS
闆诲 - 闆绘簮
3.3V
闋荤巼绌╁畾搴�
卤20ppm
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-40掳C ~ 85掳C
闆绘祦 - 闆绘簮锛堟渶澶у€硷級
4.5mA
绛夌礆
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琛ㄩ潰璨艰
灏佽/澶栨
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妯欐簴鍖呰
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SIT8008BI-11-33E-27.000000G 鍔熻兘鎻忚堪:OSC MEMS 27.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:27MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-11-25E-20.000000G 鍔熻兘鎻忚堪:OSC MEMS 20.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:20MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:2.5V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.2mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-11-18E-54.000000G 鍔熻兘鎻忚堪:OSC MEMS 54.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:54MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.1mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8008BI-11-18E-25.000000G 鍔熻兘鎻忚堪:OSC MEMS 25.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:25MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.1mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8008BI-11-18E-100.000000G 鍔熻兘鎻忚堪:OSC MEMS 100.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:100MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.1mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8008BI-11-33E-8.000000E SIT8008BI-11-33E-90.000000D SIT8008BI-11-33E-90.000000E SIT8008BI-11-33S-1.024000D SIT8008BI-11-33S-1.024000E SIT8008BI-11-33S-10.000000D SIT8008BI-11-33S-10.000000E SIT8008BI-11-33S-10.00000D SIT8008BI-11-33S-10.00000E SIT8008BI-11-33S-16.000000E SIT8008BI-11-33S-22.579200E SIT8008BI-11-33S-24.000000D SIT8008BI-11-33S-24.000000E SIT8008BI-11-33S-24.00000D SIT8008BI-11-33S-24.00000E SIT8008BI-11-33S-31.250000D SIT8008BI-11-33S-31.250000E SIT8008BI-11-33S-54.000000E