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SIT8008BI-12-18E-20.750000D

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SIT8008BI-12-18E-20.000000G 鍔熻兘鎻忚堪:OSC MEMS 20.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:20MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V 闋荤巼绌╁畾搴�:卤25ppm 绲曞皪鐗藉紩鑼冨湇锛圓PR锛�:- 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.1mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8008BI-12-18E-100.000000G 鍔熻兘鎻忚堪:OSC MEMS 100.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:100MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V 闋荤巼绌╁畾搴�:卤25ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.1mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8008BI-11-XXX-000.FP0000G 鍔熻兘鎻忚堪:PROG OSC BLANK 1-110MHZ LVCMOS 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 鍙法绋嬮鍨�:绌虹櫧锛堥爤鐢辩敤鎴跺暉鐢ㄧ▼搴忥級鍙敤闋荤巼鑼冨湇:1MHz ~ 110MHz 鍔熻兘:鍟熺敤/绂佺敤锛屽緟姗� 杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V锛�2.5 V ~ 3.3 V 闋荤巼绌╁畾搴�:卤20ppm 闋荤巼绌╁畾鎬э紙绺介珨锛�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 鎿撮牷甯跺:- 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害:0.031"锛�0.80mm锛� 妯欐簴鍖呰:1 SIT8008BI-11-XXX-000.FP0000E 鍔熻兘鎻忚堪:1MHz ~ 110MHz LVCMOS MEMS (Silicon) Programmable Oscillator Surface Mount 1.8V, 2.5 V ~ 3.3 V 4.5mA Enable/Disable 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 鍙法绋嬮鍨�:绌虹櫧锛堥爤鐢辩敤鎴跺暉鐢ㄧ▼搴忥級鍙敤闋荤巼鑼冨湇:1MHz ~ 110MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V锛�2.5 V ~ 3.3 V 闋荤巼绌╁畾搴�:- 闋荤巼绌╁畾鎬э紙绺介珨锛�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 鎿撮牷甯跺:- 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔锛圖FN锛孡CC锛� 澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害:0.031"锛�0.79mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-11-XXX-000.FP0000 鍔熻兘鎻忚堪:1MHz ~ 110MHz LVCMOS MEMS (Silicon) Programmable Oscillator Surface Mount 1.8V, 2.5 V ~ 3.3 V 4.5mA Enable/Disable, Standby 鍒堕€犲晢:sitime 绯诲垪:SiT8008 鍖呰:鏁ｈ 闆朵欢鐙€鎱�:鏈夋晥椤炲瀷:MEMS锛堢锛� 鍙法绋嬮鍨�:绌虹櫧锛堥爤鐢辩敤鎴跺暉鐢ㄧ▼搴忥級鍙敤闋荤巼鑼冨湇:1MHz ~ 110MHz 鍔熻兘:鍟熺敤/绂佺敤锛屽緟姗� 杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V锛�2.5 V ~ 3.3 V 闋荤巼绌╁畾搴�:卤20ppm 闋荤巼绌╁畾鎬э紙绺介珨锛�:- 宸ヤ綔婧害:-40掳C ~ 85掳C锛�-20掳C ~ -40掳C 鎿撮牷甯跺:- 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔锛圖FN锛孡CC锛� 澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害:0.031"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:250 SIT8008BI-12-18E-24.54545E SIT8008BI-12-18E-25.000000E SIT8008BI-12-18E-27.000000D SIT8008BI-12-18E-27.000000E SIT8008BI-12-18E-33.000000D SIT8008BI-12-18E-33.000000E SIT8008BI-12-18E-36.000000D SIT8008BI-12-18E-36.000000E SIT8008BI-12-18E-37.087912E SIT8008BI-12-18E-37.125000D SIT8008BI-12-18E-37.125000E SIT8008BI-12-18E-38.400000D SIT8008BI-12-18E-38.400000E SIT8008BI-12-18E-40.000000D SIT8008BI-12-18E-40.000000E SIT8008BI-12-18E-48.000000D SIT8008BI-12-18E-48.000000E SIT8008BI-12-18E-50.000000D