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SIT8008BI-12-33E-20.000000G

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SIT8008BI-12-33E-20.000000G
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SIT8008BI-12-33E-20.000000G PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

SIT8008BI-12-33E-20.000000G PDF涓嬭級

鍔熻兘鎻忚堪
OSC MEMS 20.0000MHZ LVCMOS SMD
鍒堕€犲晢
sitime
绯诲垪
SiT8008B
鍖呰
鍓垏甯讹紙CT锛�
闆朵欢鐙€鎱�
鍦ㄥ敭
椤炲瀷
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闋荤巼
20MHz
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鍟熺敤/绂佺敤
杓稿嚭
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3.3V
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-40掳C ~ 85掳C
闆绘祦 - 闆绘簮锛堟渶澶у€硷級
4.5mA
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琛ㄩ潰璨艰
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妯欐簴鍖呰
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SIT8008BI-12-33E-20.000000G 鎶€琛撳弮鏁�

SIT8008BI-12-33E-19.660800G 鍔熻兘鎻忚堪:OSC MEMS 19.6608MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:19.6608MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤25ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-12-25E-80.000000G 鍔熻兘鎻忚堪:OSC MEMS 80.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:80MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:2.5V 闋荤巼绌╁畾搴�:卤25ppm 绲曞皪鐗藉紩鑼冨湇锛圓PR锛�:- 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.2mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-12-25E-50.000000G 鍔熻兘鎻忚堪:OSC MEMS 50.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:50MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:2.5V 闋荤巼绌╁畾搴�:卤25ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.2mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-12-25E-26.796000G 鍔熻兘鎻忚堪:OSC MEMS 26.7960MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:26.796MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:2.5V 闋荤巼绌╁畾搴�:卤25ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.2mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-12-25E-25.000000G 鍔熻兘鎻忚堪:OSC MEMS 25.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:25MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:2.5V 闋荤巼绌╁畾搴�:卤25ppm 绲曞皪鐗藉紩鑼冨湇锛圓PR锛�:- 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.2mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-12-33E-26.000000E SIT8008BI-12-33E-27.000000D SIT8008BI-12-33E-27.000000E SIT8008BI-12-33E-27.120000D SIT8008BI-12-33E-27.120000E SIT8008BI-12-33E-28.636360D SIT8008BI-12-33E-28.636360E SIT8008BI-12-33E-30.000000D SIT8008BI-12-33E-30.000000E SIT8008BI-12-33E-33.330000D SIT8008BI-12-33E-33.333333D SIT8008BI-12-33E-33.333333E SIT8008BI-12-33E-36.000000D SIT8008BI-12-33E-36.000000E SIT8008BI-12-33E-37.125000D SIT8008BI-12-33E-37.125000E SIT8008BI-12-33E-40.000000D SIT8008BI-12-33E-40.000000E