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SIT8008BI-21-33E-40.000000G

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SIT8008BI-21-33E-40.000000G
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SIT8008BI-21-33E-40.000000G PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

SIT8008BI-21-33E-40.000000G PDF涓嬭級

鍔熻兘鎻忚堪
OSC MEMS 40.0000MHZ LVCMOS SMD
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sitime
绯诲垪
SiT8008B
鍖呰
鍓垏甯讹紙CT锛�
闆朵欢鐙€鎱�
鍦ㄥ敭
椤炲瀷
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40MHz
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鍟熺敤/绂佺敤
杓稿嚭
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闆诲 - 闆绘簮
3.3V
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卤20ppm
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-40掳C ~ 85掳C
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4.5mA
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琛ㄩ潰璨艰
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0.032"锛�0.80mm锛�
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妯欐簴鍖呰
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SIT8008BI-21-33E-40.000000G 鎶€琛撳弮鏁�

SIT8008BI-21-33E-21.474837G 鍔熻兘鎻忚堪:OSC MEMS 21.474837MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:21.474837MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-21-33E-16.384000G 鍔熻兘鎻忚堪:OSC MEMS 16.3840MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:16.384MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-21-33E-15.728640G 鍔熻兘鎻忚堪:OSC MEMS 15.72864MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:15.72864MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-21-33E-100.000000G 鍔熻兘鎻忚堪:OSC MEMS 100.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:100MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤20ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-13-XXS-48.000000G 鍔熻兘鎻忚堪:OSC MEMS 48.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:48MHz 鍔熻兘:寰呮 锛堟柗闆伙級杓稿嚭:LVCMOS 闆诲 - 闆绘簮:2.5 V ~ 3.3 V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.3渭A 妯欐簴鍖呰:1 SIT8008BI-21-33E-65.000000E SIT8008BI-21-33E-65.536000D SIT8008BI-21-33E-65.536000E SIT8008BI-21-33E-8.000000D SIT8008BI-21-33E-8.000000E SIT8008BI-21-33E-98.304000D SIT8008BI-21-33E-98.304000E SIT8008BI-21-33N-20.000000E SIT8008BI-21-33N-39.000000D SIT8008BI-21-33N-39.000000E SIT8008BI-21-33S-1.000000D SIT8008BI-21-33S-1.000000E SIT8008BI-21-33S-12.000000E SIT8008BI-21-33S-24.000000D SIT8008BI-21-33S-24.000000E SIT8008BI-21-33S-3.686400E SIT8008BI-21-33S-33.333333D SIT8008BI-21-33S-33.333333E