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SIT8008BI-23-33E-16.000000G

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SIT8008BI-23-33E-16.000000G
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SIT8008BI-23-33E-16.000000G PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

SIT8008BI-23-33E-16.000000G PDF涓嬭級

鍔熻兘鎻忚堪
OSC MEMS 16.0000MHZ LVCMOS SMD
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sitime
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SiT8008B
鍖呰
鍓垏甯讹紙CT锛�
闆朵欢鐙€鎱�
鍦ㄥ敭
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闋荤巼
16MHz
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鍟熺敤/绂佺敤
杓稿嚭
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3.3V
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-40掳C ~ 85掳C
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4.5mA
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琛ㄩ潰璨艰
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SIT8008BI-23-33E-16.000000G 鎶€琛撳弮鏁�

SIT8008BI-23-33E-13.560000G 鍔熻兘鎻忚堪:OSC MEMS 13.5600MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:13.56MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-23-33E-12.288000G 鍔熻兘鎻忚堪:OSC MEMS 12.2880MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:12.288MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-23-33E-10.000000G 鍔熻兘鎻忚堪:OSC MEMS 10.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:10MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8008BI-23-33E-1.843200G 鍔熻兘鎻忚堪:1.8432MHz LVCMOS MEMS (Silicon) Oscillator Surface Mount 3.3V 4.5mA Enable/Disable 鍒堕€犲晢:sitime 绯诲垪:SiT8008 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鏈夋晥椤炲瀷:MEMS锛堢锛� 闋荤巼:1.8432MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害:0.031"锛�0.80mm锛� 灏佽/澶栨:4-SMD锛岀劇寮曠窔锛圖FN锛孡CC锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8008BI-23-18E-49.140000G 鍔熻兘鎻忚堪:OSC MEMS 49.1400MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8008B 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:49.14MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V 闋荤巼绌╁畾搴�:卤50ppm 绲曞皪鐗藉紩鑼冨湇锛圓PR锛�:- 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:4.1mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.126" 闀� x 0.098" 瀵紙3.20mm x 2.50mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8008BI-23-33E-24.000000E SIT8008BI-23-33E-24.000000G SIT8008BI-23-33E-24.576000D SIT8008BI-23-33E-24.576000E SIT8008BI-23-33E-25.000000D SIT8008BI-23-33E-25.000000E SIT8008BI-23-33E-25.000000G SIT8008BI-23-33E-26.000000D SIT8008BI-23-33E-26.000000E SIT8008BI-23-33E-27.000000D SIT8008BI-23-33E-27.000000E SIT8008BI-23-33E-27.000000G SIT8008BI-23-33E-27.000625D SIT8008BI-23-33E-27.000625E SIT8008BI-23-33E-3.686400D SIT8008BI-23-33E-3.686400E SIT8008BI-23-33E-31.100000D SIT8008BI-23-33E-31.100000E