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SIT8009BI-13-18E-133.333333G

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SIT8009BI-13-18E-133.333333G
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SIT8009BI-13-18E-133.333333G PDF涓嬭級 鍦栨枃鍙婅硣鏂欏儏渚涘弮鑰冿紝浠ュ闅汸DF鐐烘簴

SIT8009BI-13-18E-133.333333G PDF涓嬭級

鍔熻兘鎻忚堪
OSC MEMS 133.333333MHZ LVCMOS
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SiT8009
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鍓垏甯讹紙CT锛�
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133.333333MHz
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SIT8009BI-13-18E-133.333333G 鎶€琛撳弮鏁�

SIT8009BI-13-18E-125.000000G 鍔熻兘鎻忚堪:OSC MEMS 125.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8009 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:125MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-40掳C ~ 85掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:5.6mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.032"锛�0.80mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:3.8mA 妯欐簴鍖呰:1 SIT8009BI-11-XXX-000.FP000G 鍔熻兘鎻忚堪:OSC PROG LVCMOS OE/STBY SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8009 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 鍙法绋嬮鍨�:绌虹櫧锛堥爤鐢辩敤鎴跺暉鐢ㄧ▼搴忥級鍙敤闋荤巼鑼冨湇:115MHz ~ 137MHz 鍔熻兘:鍟熺敤/绂佺敤锛屽緟姗� 杓稿嚭:LVCMOS 闆诲 - 闆绘簮:1.8V锛�2.5 V ~ 3.3 V 闋荤巼绌╁畾搴�:卤20ppm锛屄�25ppm锛屄�50ppm 闋荤巼绌╁畾鎬э紙绺介珨锛�:- 宸ヤ綔婧害:-40掳C ~ 85掳C 鎿撮牷甯跺:- 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:7.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.098" 闀� x 0.079" 瀵紙2.50mm x 2.00mm锛� 楂樺害:0.031"锛�0.80mm锛� 妯欐簴鍖呰:1 SIT8009BC-83-33E-133.000000X 鍔熻兘鎻忚堪:OSC MEMS 133.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8009 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:133MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:7.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.276" 闀� x 0.197" 瀵紙7.00mm x 5.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.039"锛�1.00mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8009BC-83-33E-125.000000X 鍔熻兘鎻忚堪:125MHz LVCMOS MEMS (Silicon) Oscillator Surface Mount 3.3V 7.5mA Enable/Disable 鍒堕€犲晢:sitime 绯诲垪:SiT8009 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鏈夋晥椤炲瀷:MEMS锛堢锛� 闋荤巼:125MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤50ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:7.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 澶у皬/灏哄:0.276" 闀� x 0.197" 瀵紙7.00mm x 5.00mm锛� 楂樺害:0.039"锛�1.00mm锛� 灏佽/澶栨:4-SMD锛岀劇寮曠窔锛圖FN锛孡CC锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4mA 妯欐簴鍖呰:1 SIT8009BC-82-33E-125.000000X 鍔熻兘鎻忚堪:OSC MEMS 125.0000MHZ LVCMOS SMD 鍒堕€犲晢:sitime 绯诲垪:SiT8009 鍖呰:鍓垏甯讹紙CT锛� 闆朵欢鐙€鎱�:鍦ㄥ敭椤炲瀷:MEMS锛堢锛� 闋荤巼:125MHz 鍔熻兘:鍟熺敤/绂佺敤杓稿嚭:LVCMOS 闆诲 - 闆绘簮:3.3V 闋荤巼绌╁畾搴�:卤25ppm 宸ヤ綔婧害:-20掳C ~ 70掳C 闆绘祦 - 闆绘簮锛堟渶澶у€硷級:7.5mA 绛夌礆:- 瀹夎椤炲瀷:琛ㄩ潰璨艰 灏佽/澶栨:4-SMD锛岀劇寮曠窔澶у皬/灏哄:0.276" 闀� x 0.197" 瀵紙7.00mm x 5.00mm锛� 楂樺害 - 瀹夎锛堟渶澶у€硷級:0.039"锛�1.00mm锛� 闆绘祦 - 闆绘簮锛堢鐢級锛堟渶澶у€硷級:4.2mA 妯欐簴鍖呰:1 SIT8009BI-13-33S-125.000000E SIT8009BI-21-18E-125.000000E SIT8009BI-21-18S-125.000000D SIT8009BI-21-18S-125.000000E SIT8009BI-21-25E-125.000000D SIT8009BI-21-25E-125.000000E SIT8009BI-21-33E-125.000000D SIT8009BI-21-33E-125.000000E SIT8009BI-21-33E-125.000000G SIT8009BI-21-33E-125.00000D SIT8009BI-21-33E-125.00000E SIT8009BI-21-33S-125.000000D SIT8009BI-21-33S-125.000000E SIT8009BI-21-XXE-125.000000D SIT8009BI-21-XXE-125.000000E SIT8009BI-21-XXX-000.FP000G SIT8009BI-22-18E-125.000000D SIT8009BI-22-18E-125.00000D