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參數(shù)資料
| 型號(hào)： | 2SK973(S) |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直|甲（丁）|對(duì)252AA |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大小： | 39K |
| 代理商： | 2SK973(S) |
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
– Can be driven from 5 V source
Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
123
2
1
3
TO–220AB
1. Gate
2. Drain
(Flange)
3. Source
Table 1 Absolute Maximum Ratings
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source voltage
V
DSS
———————————————————————————————————————————
Gate to source voltage
V
GSS
———————————————————————————————————————————
Drain current
I
D
———————————————————————————————————————————
Drain peak current
I
D(pulse)
*
———————————————————————————————————————————
Body to drain diode reverse drain current
I
DR
———————————————————————————————————————————
Channel dissipation
Pch**
———————————————————————————————————————————
Channel temperature
Tch
———————————————————————————————————————————
Storage temperature
Tstg
———————————————————————————————————————————
*
PW
≤
10 μs, duty cycle
≤
1 %
**
Value at T
C
= 25 °C
Symbol
Ratings
Unit
60
V
±20
V
10
A
40
A
10
A
30
W
150
°C
–55 to +150
°C
2SK970
Silicon N-Channel MOS FET
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK974 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:高速高壓MOS大功率場(chǎng)效應(yīng)管 |
| 2SK974(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-251AA |
| 2SK974(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA |
| 2SK974L | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK974L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
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