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參數資料
| 型號： | 2SK974(L) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 3A條（丁）|對251AA |
| 文件頁數： | 2/7頁 |
| 文件大小： | 39K |
| 代理商： | 2SK974(L) |
Table 2 Electrical Characteristics
(Ta = 25°C)
Item
———————————————————————————————————————————
Drain to source breakdown
V
(BR)DSS
60
voltage
———————————————————————————————————————————
Gate to source breakdown
V
(BR)GSS
±20
voltage
———————————————————————————————————————————
Gate to source leak current
I
GSS
—
———————————————————————————————————————————
Zero gate voltage drain current
I
DSS
—
———————————————————————————————————————————
Gate to source cutoff voltage
V
GS(off)
1.0
———————————————————————————————————————————
Static drain to source on state
R
DS(on)
—
resistance
Symbol
Min
Typ
Max
Unit
Test conditions
—
—
V
I
D
= 10 mA, V
GS
= 0
—
—
V
I
G
= ±100 μA, V
DS
= 0
—
±10
μA
V
GS
= ±16 V, V
DS
= 0
—
250
μA
V
DS
= 50 V, V
GS
= 0
—
2.0
V
I
D
= 1 mA, V
DS
= 10 V
0.12
———————
0.17
0.15
I
D
= 5 A, V
GS
= 10 V *
——————————–
I
D
= 5 A, V
GS
= 4 V *
0.22
———————————————————————————————————————————
Forward transfer admittance
|y
fs
|
3.5
———————————————————————————————————————————
Input capacitance
Ciss
—
————————————————————————————————
Output capacitance
Coss
—
————————————————————————————————
Reverse transfer capacitance
Crss
—
———————————————————————————————————————————
Turn-on delay time
t
d(on)
—
————————————————————————————————
Rise time
t
r
—
————————————————————————————————
Turn-off delay time
t
d(off)
—
————————————————————————————————
Fall time
t
f
—
———————————————————————————————————————————
Body to drain diode forward
V
DF
—
voltage
———————————————————————————————————————————
Body to drain diode reverse
t
rr
—
recovery time
———————————————————————————————————————————
* Pulse Test
6.0
—
S
I
D
= 5 A, V
DS
= 10 V *
400
—
pF
V
DS
= 10 V, V
GS
= 0,
220
—
pF
f = 1 MHz
60
—
pF
5
—
ns
I
D
= 5 A, V
GS
= 10 V,
55
—
ns
R
L
= 6
140
—
ns
90
—
ns
1.2
—
V
I
F
= 10 A, V
GS
= 0
125
—
ns
I
F
= 10 A, V
GS
= 0,
di
F
/dt = 50 A/μs
2SK970
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK974L(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK974S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK975 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK975-E | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFETS FOR GENERAL SWITCHING |
| 2SK975TZ-E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,1.5A,0.3ohm,TO-92 Mod 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 1.5A 3-Pin TO-92 Mod T/R |
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