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參數資料
| 型號： | DE150-501N04A |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching RF Power MOSFET |
| 中文描述： | N溝道增強模式雪崩額定低Qg和RG高dv / dt的納秒級射頻功率MOSFET開關 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 77K |
| 代理商： | DE150-501N04A |
DE150-501N04A
RF Power MOSFET
Directed Energy, Inc.
IXYS
Company
An
Preliminary Data Sheet
V
DSS
I
D25
R
DS(on)
P
DHS
=
=
=
=
500 V
4.5 A
1.5
80W
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25°C to 150°C
500
V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 M
500
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
c
= 25°C
4.5
A
I
DM
T
c
= 25°C, pulse width limited by T
JM
27
A
I
AR
T
c
= 25°C
4.5
A
E
AR
T
c
= 25°C
-
mJ
I
S
≤
I
DM
, di/dt
≤
100A/
μ
s, V
DD
≤
V
DSS
,
T
j
≤
150°C, R
G
= 0.2
3.5 V/ns
I
S
= 0
>200 V/ns
P
DHS
T
c
= 25°C
Derate 4.4W/°C above 25°C
80
W
P
DAMB
T
c
= 25°C
3.5
W
T
J
-55…+150
°C
T
JM
150
°C
T
stg
-55…+150
°C
T
L
1.6mm (0.063 in) from case for 10 s
300
°C
Weight
2
g
dv/dt
Symbol
Test Conditions
Characteristic Values
T
J
= 25°C unless otherwise specified
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 ma
2
3
4
V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0
±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
25
250
μ
A
μ
A
R
DS(on)
1.5
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test
2.7
4.0
S
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t
≤
300
μ
S, duty cycle d
≤
2%
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Q
g
process
Low gate charge and capacitances
easier to drive
faster switching
Low R
DS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to >100MHz
Easy to mount—no insulators needed
High power density
N-Channel Enhancement Mode
Avalanche Rated
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
DRAIN
SG1
SG2
GATE
SD1
SD2
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