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參數資料
| 型號： | MC1121DMR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 穩壓器 |
| 英文描述： | 100mA Charge Pump Voltage Converter with Shutdown |
| 中文描述： | SWITCHED CAPACITOR CONVERTER, 200 kHz SWITCHING FREQ-MAX, PDSO5 |
| 封裝： | PLASTIC, MICROPAK-8 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 102K |
| 代理商： | MC1121DMR2 |
MC1121
http://onsemi.com
2
PIN DESCRIPTION
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typ, FC has no effect when OSC pin is driven externally
Frequency control for internal oscillator, FC = open, FOSC = 10kHz typ; FC = VDD, FOSC = 200kHz
3
GND
Power–supply ground input
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4
CAP–
Charge–pump capacitor, negative terminal
5
SHDN
Output, negative voltage
6
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7
Oscillator control input. An external capacitor can be added to slow the oscillator. Take care to
minimize stray capacitance. An external oscillator also may be connected to overdrive OSC
8
VDD
Power–supply positive voltage input
ABSOLUTE MAXIMUM RATINGS*
Parameter
Value
Unit
VDD Supply Voltage
Operating Temperature Range
6.0
V
–40 to +85
°
C
OSC, FC, SHDN Input Voltage
–0.3 to (VDD + 0.3)
10
V
Output Short Circuit Duration
Sec
Storage Temperature Range
–65 to +150
°
C
Package Power Dissipation (TA
≤
70
°
C) Micro8
Derate by 4mW/
°
C for TA > 70
°
C
333
mW
Lead Temperature (Soldering, 10 Seconds)
+300
°
C
* Maximum Ratings are those values beyond which damage to the device may occur.
ELECTRICAL CHARACTERISTICS
(TA = –40
°
C to +85
°
C, VDD = 5V
±
10% COSC = OPEN, C1, C2 = 10
μ
F, FC = VDD,
SHDN = VIH,
unless otherwise noted. Typical values are at TA = 25
°
C.)
Symbol
Characteristic
Min
Typ
Max
Unit
IDD
Active Supply Current
RL = Open, FC = Open or GND
RL = Open, FC = VDD
Shutdown Supply Current (SHDN = 0V)
—
—
50
0.6
100
1.0
μ
A
mA
IDD(SHDN)
VDD
VIH
VIL
IIN
—
0.2
1.0
μ
A
Supply Voltage
2.4
—
5.5
V
SHDN Logic High Input Voltage
VDD x 0.8
—
—
—
V
SHDN Logic Low Input Voltage
—
0.4
V
Input Leakage Current
SHDN, OSC
FC Pin
–1.0
–4.0
—
—
1.0
4.0
μ
A
ROUT
IOUT
FOSC
Output Source Resistance (IOUT = 60 mA)
Output Current (VOUT more negative than –3.75V)
Oscillator Frequency
OSC Open, FC = Open or GND
SHDN = VIH, FC = VDD
Power Efficiency (FC = GND)
RL = 2k between VDD and VOUT
RL = 1 k between VOUT and GND
IL = 60 mA to GND
Voltage Conversion Efficiency (RL = OPEN)
—
12
20
60
100
—
mA
5.0
100
10
200
—
—
kHz
PEFF
93
94
—
97
97
92
—
—
—
%
VEFF
99
99.9
—
%
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