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參數資料
| 型號： | MC33275ST-3.0T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 基準電壓源/電流源 |
| 英文描述： | LOW DROPOUT MICROPOWER VOLTAGE REGULATOR |
| 中文描述： | 3 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PSSO3 |
| 封裝： | TO-261, SOT-223, 3 PIN |
| 文件頁數： | 2/12頁 |
| 文件大小： | 197K |
| 代理商： | MC33275ST-3.0T3 |
MC33275
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= 25
°
C, for min/max values T
J
= –40
°
C to +125
°
C)
Rating
Symbol
Value
Unit
Input Voltage
V
CC
13
Vdc
Power Dissipation and Thermal Characteristics
T
A
= 25
°
C
Maximum Power Dissipation
Case 751 (SOP–8) D Suffix
Thermal Resistance, Junction–to–Ambient
Thermal Resistance, Junction–to–Case
Case 369A (DPAK) DT Suffix
Thermal Resistance, Junction–to–Air
Thermal Resistance, Junction–to–Case
Case 318E (SOT–223) ST Suffix
Thermal Resistance, Junction–to–Air
Thermal Resistance, Junction–to–Case
P
D
R
θ
JA
R
θ
JC
R
θ
JA
R
θ
JC
R
θ
JA
R
θ
JC
Internally Limited
160
25
92
6.0
245
15
W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
Output Current
I
O
300
mA
Maximum Junction Temperature
T
J
150
°
C
Operating Junction Temperature Range
T
J
– 40 to +125
°
C
Storage Temperature Range
T
stg
– 65 to +150
°
C
ELECTRICAL CHARACTERISTICS
(C
L
= 1.0
μ
F, T
A
= 25
°
C, for min/max values T
J
= –40
°
C to +125
°
C, Note 1)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Voltage
2.5 V Suffix
3.0 V Suffix
3.3 V Suffix
5.0 V Suffix
I
O
= 0 mA to 250 mA
T
A
= 25
°
C, V
in
= [V
O
+ 1] V
2.5 V Suffix
3.0 V Suffix
3.3 V Suffix
5.0 V Suffix
V
in
= [V
O
+ 1] V, 0 < I
O
< 100 mA
2% Tolerance from T
J
= –40 to +125
°
C
V
O
2.475
2.970
3.267
4.950
2.450
2.940
3.234
4.900
2.50
3.00
3.30
5.00
—
—
—
—
2.525
3.030
3.333
5.05
2.550
3.060
3.366
5.100
Vdc
Line Regulation
V
in
= [V
O
+ 1] V to 12 V, I
O
= 250 mA,
All Suffixes T
A
= 25
°
C
Reg
line
–
2.0
10
mV
Load Regulation
V
in
= [V
O
+ 1] V, I
O
= 0 mA to 250 mA,
All Suffixes T
A
= 25
°
C
Reg
load
–
5.0
25
mV
Dropout Voltage
I
O
= 10 mA
I
O
= 100 mA
I
O
= 250 mA
I
O
= 300 mA
T
J
= –40
°
C to +125
°
C
V
in
– V
O
—
—
—
—
25
115
220
260
100
200
400
500
mV
Ripple Rejection (120 Hz)
V
in(peak–peak)
= [V
O
+ 1.5] V to [V
O
+ 5.5] V
—
65
75
—
dB
Output Noise Voltage
C
L
= 1 F
C
L
= 200 F
I
O
= 50 mA (10 Hz to 100 kHz)
V
n
—
—
160
46
—
—
Vrm
s
CURRENT PARAMETERS
Characteristic
Symbol
Min
Typ
Max
Unit
Quiescent Current
On Mode
On Mode SAT
V
in
= [V
O
+ 1] V, I
O
= 0 mA
V
in
= [V
O
– 0.5] V, I
O
= 0 mA, Note 2
I
Q
—
—
125
1100
200
1500
A
Current Limit
V
in
= [V
O
+ 1], V
O
shorted
I
LIMIT
—
450
—
mA
THERMAL SHUTDOWN
Characteristic
Symbol
Min
Typ
Max
Unit
Thermal Shutdown
—
—
150
—
°
C
NOTE:
1. Low duty pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
NOTE:
2. Quiescent Current is measured where the PNP pass transistor is in saturation. V
in
= [V
O
– 0.5] V guarantees this condition.
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