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參數(shù)資料
| 型號(hào)： | MC33375ST-3.3T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | LOW DROPOUT MICROPOWER VOLTAGE REGULATOR |
| 中文描述： | 3.3 V FIXED POSITIVE LDO REGULATOR, 0.5 V DROPOUT, PDSO4 |
| 封裝： | TO-261, SOT-223, 4 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 213K |
| 代理商： | MC33375ST-3.3T3 |
MC33375
http://onsemi.com
3
DEFINITIONS
Load Regulation
– The change in output voltage for a
change in load current at constant chip temperature.
Dropout Voltage
– The input/output differential at which
the regulator output no longer maintains regulation against
further reductions in input voltage. Measured when the
output drops 100 mV below its nominal value (which is
measured at 1.0 V differential), dropout voltage is affected
by junction temperature, load current and minimum input
supply requirements.
Output Noise Voltage
– The RMS AC voltage at the
output with a constant load and no input ripple, measured
over a specified frequency range.
Maximum Power Dissipation
– The maximum total
dissipation for which the regulator will operate within
specifications.
Quiescent Current
– Current which is used to operate the
regulator chip and is not delivered to the load.
Line Regulation
– The change in output voltage for a
change in the input voltage. The measurement is made under
conditions of low dissipation or by using pulse techniques
such that the average chip temperature is not significantly
affected.
Maximum Package Power Dissipation
– The maximum
package power dissipation is the power dissipation level at
which the junction temperature reaches its maximum value
i.e. 150
°
C. The junction temperature is rising while the
difference between the input power (V
CC
X I
CC
) and the
output power (V
out
X I
out
) is increasing.
Depending on ambient temperature, it is possible to
calculate the maximum power dissipation and so the
maximum current as following:
TJ– TA
RJA
The maximum operating junction temperature T
J
is
specified at 150
°
C, if T
A
= 25
°
C, then P
D
can be found. By
neglecting the quiescent current, the maximum power
dissipation can be expressed as:
PD
VCC– Vout
The thermal resistance of the whole circuit can be
evaluated by deliberately activating the thermal shutdown
of the circuit (by increasing the output current or raising the
input voltage for example).
Then you can calculate the power dissipation by
subtracting the output power from the input power. All
variables are then well known: power dissipation, thermal
shutdown temperature (150
°
C for MC33375) and ambient
temperature.
TJ– TA
PD
Pd
Iout
RJA
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC33375ST-5.0T3 | 功能描述:低壓差穩(wěn)壓器 - LDO 5.0V 300mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MC33375ST-5.0T3G | 功能描述:低壓差穩(wěn)壓器 - LDO 5.0V 300mA RoHS:否 制造商:Texas Instruments 最大輸入電壓:36 V 輸出電壓:1.4 V to 20.5 V 回動(dòng)電壓（最大值）:307 mV 輸出電流:1 A 負(fù)載調(diào)節(jié):0.3 % 輸出端數(shù)量: 輸出類型:Fixed 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:VQFN-20 |
| MC33385DHR2 | 功能描述:IC SWITCH QUAD L-SIDE 20-HSOP RoHS:是 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動(dòng)器 - 內(nèi)部開關(guān) 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動(dòng)器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| MC33385VW | 功能描述:功率驅(qū)動(dòng)器IC QUID+OSINE FUNCTION RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
| MC33385VWR2 | 功能描述:功率驅(qū)動(dòng)器IC QUID+OSINE FUNCTION RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube |
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