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參數資料
| 型號： | MC74HC1G04 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| 中文描述： | 高速CMOS反相器制造硅柵CMOS工藝 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 93K |
| 代理商： | MC74HC1G04 |
MC74HC1G32
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
T
STG
T
L
T
J
DC Supply Voltage
0.5 to
7.0
V
DC Input Voltage
0.5 to V
CC
0.5 to V
CC
0.5
V
DC Output Voltage
0.5
V
DC Input Diode Current
20
mA
DC Output Diode Current
20
mA
DC Output Sink Current
12.5
mA
DC Supply Current per Supply Pin
25
mA
Storage Temperature Range
65 to
150
C
Lead Temperature, 1 mm from Case for 10 Seconds
260
C
Junction Temperature Under Bias
150
C
JA
Thermal Resistance
SC70–5/SC–88A/SOT–353 (Note 1)
SOT23–5/TSOP–5/SC59–5
350
230
C/W
P
D
Power Dissipation in Still Air at 85 C
SC70–5/SC–88A/SOT–353
SOT23–5/TSOP–5/SC59–5
150
200
mW
MSL
Moisture Sensitivity
Level 1
F
R
V
ESD
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V–0 @ 0.125 in
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
2000
200
N/A
V
I
LATCH–UP
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 20 ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
5. Tested to EIA/JESD78.
Latch–Up Performance
Above V
CC
and Below GND at 125 C (Note 5)
500
mA
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
2.0
6.0
V
DC Input Voltage
0.0
V
CC
V
CC
125
V
DC Output Voltage
0.0
V
Operating Temperature Range
55
C
Input Rise and Fall Time
V
CC
= 2.0 V
V
CC
= 3.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
0
1000
600
500
400
ns
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°
C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time Junction Temperature
N
TIME, YEARS
T
J
T
J
T
J
T
J
T
J
T
J
相關PDF資料 |
PDF描述 |
|---|---|
| MC74HC1G04DFT1G | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| MC74HC1G04DFT2 | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| MC74HC1G04DFT2G | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| MC74HC1G04DTT1 | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| MC74HC1G04DTT1G | High speed CMOS inverter fabricated with silicon gate CMOS technology |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC74HC1G04DFT1 | 功能描述:變換器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 電路數量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| MC74HC1G04DFT1G | 功能描述:變換器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 電路數量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| MC74HC1G04DFT2 | 功能描述:變換器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 電路數量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| MC74HC1G04DFT2G | 功能描述:變換器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 電路數量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| MC74HC1G04DTT1 | 功能描述:變換器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 電路數量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
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