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參數(shù)資料
| 型號(hào)： | MC74HC1G04DFT2G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 通用總線功能 |
| 英文描述： | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| 中文描述： | HC/UH SERIES, 1-INPUT INVERT GATE, PDSO5 |
| 封裝： | LEAD FREE, SC-70, SC-88A, SOT-353, 5 PIN |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 93K |
| 代理商： | MC74HC1G04DFT2G |
MC74HC1G32
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
V
CC
(V)
T
A
= 25 C
Typ
T
A
Min
85 C
55 C
T
A
125 C
Symbol
Parameter
Test Conditions
Min
Max
Max
Min
Max
Unit
V
IH
Minimum High–Level
Input Voltage
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
1.5
2.1
3.15
4.20
V
V
IL
Maximum Low–Level
Input Voltage
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
0.5
0.9
1.35
1.80
V
V
OH
Minimum High–Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= –20 A
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
2.0
3.0
4.5
6.0
1.9
2.9
4.4
5.9
1.9
2.9
4.4
5.9
V
V
IN
= V
IH
or V
IL
I
OH
= –2 mA
I
OH
= –2.6 mA
4.5
6.0
4.18
5.68
4.31
5.80
4.13
5.63
4.08
5.58
V
OL
Maximum Low–Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
or V
IL
I
OL
= 20 A
2.0
3.0
4.5
6.0
0.0
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
I
OL
= 2 mA
I
OL
= 2.6 mA
4.5
6.0
0.17
0.18
0.26
0.26
0.33
0.33
0.40
0.40
I
IN
Maximum Input
Leakage Current
V
IN
= 6.0 V or GND
6.0
0.1
1.0
1.0
A
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND
6.0
1.0
10
40
A
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 6.0 ns)
T
A
= 25 C
Typ
T
A
Min
85 C
55 C
T
A
125 C
Symbol
Parameter
Test Conditions
Min
Max
Max
Min
Max
Unit
t
PLH
,
Input A or B to Y
Maximum
V
CC
= 5.0 V
V
CC
= 2.0 V
V
CC
= 4.5 V
C
L
= 15 pF
C
L
= 50 pF
3.5
15
20
25
ns
TLH
CC
CC
V
= 3.0 V
V
CC
= 4.5 V
V
= 6.0 V
8
20
20
100
27
25
125
35
35
155
L
L
Capacitance
11
125
35
25
155
45
31
38
Maximum Input
10
10
C
PD
6. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no–load dynamic
power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
Power Dissipation Capacitance (Note 6)
10
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MC74HC1G04DTT1 | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| MC74HC1G04DTT1G | High speed CMOS inverter fabricated with silicon gate CMOS technology |
| MC74HC1G08 | Single 2-Input AND Gate |
| MC74HC1G08DFT1 | Single 2-Input AND Gate |
| MC74HC1G08DFT2 | Single 2-Input AND Gate |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC74HC1G04DTT1 | 功能描述:變換器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 電路數(shù)量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時(shí)間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| MC74HC1G04DTT1G | 功能描述:變換器 2-6V Single CMOS RoHS:否 制造商:NXP Semiconductors 電路數(shù)量:6 邏輯系列:74ABT 邏輯類型:BiCMOS 高電平輸出電流:- 15 mA 低電平輸出電流:20 mA 傳播延遲時(shí)間:2.2 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 工作溫度范圍: 封裝 / 箱體:DIP-14 封裝:Tube |
| MC74HC1G08DFT1 | 功能描述:邏輯門(mén) 2-6V Single 2-Input RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| MC74HC1G08DFT1G | 功能描述:邏輯門(mén) 2-6V Single 2-Input AND RoHS:否 制造商:Texas Instruments 產(chǎn)品:OR 邏輯系列:LVC 柵極數(shù)量:2 線路數(shù)量（輸入/輸出）:2 / 1 高電平輸出電流:- 16 mA 低電平輸出電流:16 mA 傳播延遲時(shí)間:3.8 ns 電源電壓-最大:5.5 V 電源電壓-最小:1.65 V 最大工作溫度:+ 125 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DCU-8 封裝:Reel |
| MC74HC1G08DFT1GH | 制造商:ON Semiconductor 功能描述: |
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