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參數資料
| 型號： | MCM32515SG20 |
| 廠商： | MOTOROLA INC |
| 元件分類： | SRAM |
| 英文描述： | 512K x 32 Bit Fast Static RAM Module |
| 中文描述： | 2M X 8 MULTI DEVICE SRAM MODULE, 20 ns, ZMA72 |
| 封裝： | SIMM-72 |
| 文件頁數： | 3/8頁 |
| 文件大小： | 79K |
| 代理商： | MCM32515SG20 |
MCM32515
3
MOTOROLA FAST SRAM
TRUTH TABLE
Ex
G
W
Mode
VCC Current
ISB1 or ISB2
ICCA
ICCA
ICCA
Output
Cycle
H
X
X
Not Selected
High–Z
—
L
H
H
Read
High–Z
—
L
L
H
Read
Dout
Din
Read Cycle
L
X
L
Write
Write Cycle
ABSOLUTE MAXIMUM RATINGS
(Voltages referenced to VSS = 0 V)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
Vin, Vout
Iout
PD
Tbias
TA
Tstg
– 0.5 to 7.0
V
Voltage Relative to VSS
Output Current (per I/O)
– 0.5 to VCC + 0.5
±
30
V
mA
Power Dissipation
4.0
W
Temperature Under Bias
– 10 to + 85
°
C
Operating Temperature
0 to + 70
°
C
Storage Temperatrue
– 25 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED
OPERATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to + 70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
4.5
5.0
5.5
V
Input High Voltage
2.2
—
VCC+0.3*
0.8
V
Input Low Voltage
– 0.5**
—
V
*VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width
≤
20 ns)
**VIL (min) = – 3.0 V ac (pulse width
≤
20 ns)
DC CHARACTERISTICS
Parameter
Symbol
Min
Typ
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (G, Ex = VIH, Vout = 0 to VCC)
AC Active Supply Current (G, Ex = VIL, Iout = 0 mA,
Cycle time
≥
tAVAV min)
Ilkg(I)
Ilkg(O)
ICCA
—
—
±
4
μ
A
—
—
±
4
μ
A
MCM32515–20: tAVAV = 20 ns
MCM32515–25: tAVAV = 25 ns
—
—
760
700
800
740
mA
AC Standby Current (Ex = VIH, Cycle time
≥
tAVAV min)
CMOS Standby Current (Ex
≥
VCC – 0.2 V, All Inputs
≥
VCC – 0.2 V or
≤
0.2 V)
Output Low Voltage (IOL = + 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
NOTE: Good decoupling of the local power supply should always be used.
ISB1
ISB2
VOL
VOH
—
220
240
mA
—
40
60
mA
—
—
0.4
V
2.4
—
—
V
CAPACITANCE
(f = 1.0 MHz, dV = 3.0 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Characteristic
Symbol
Typ
Max
Unit
Input Capacitance
(All pins except DQ0 – DQ31, W, G, and E1 – E4)
(E1 – E4)
(W, G)
Cin
16
10
20
24
14
32
pF
Input/Output Capacitance
(DQ0 – DQ31)
Cout
8
9
pF
The devices on this module contain circuitry
to protect the inputs against damage due to
high static voltages or electric fields; however,
it is advised that normal precautions be taken
to avoid application of any voltage higher than
maximum rated voltages to these high imped-
ance circuits.
These CMOS memory circuits have been
designed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The module is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
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