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參數(shù)資料
| 型號： | MCM62486B |
| 廠商： | Motorola, Inc. |
| 英文描述： | 32K x 9 Bit BurstRAM Synchronous Static RAM |
| 中文描述： | 32K的× 9位BurstRAM同步靜態(tài)存儲器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 197K |
| 代理商： | MCM62486B |
MCM62486B
1
Motorola, Inc. 1994
32K x 9 Bit BurstRAM
Synchronous Static RAM
With Burst Counter and Self–Timed Write
The MCM62486B is a 294,912 bit synchronous static random access
memory designed to provide a burstable, high–performance, secondary cache
for the i486 and Pentium
microprocessors. It is organized as 32,768 words of
9 bits, fabricated with Motorola’s high–performance silicon–gate CMOS
technology. The device integrates input registers, a 2–bit counter, high speed
SRAM, and high drive capability outputs onto a single monolithic circuit for re-
duced parts count implementation of cache data RAM applications. Synchro-
nous design allows precise cycle control with the use of an external clock (K).
CMOS circuitry reduces the overall power consumption of the integrated func-
tions for greater reliability.
Addresses (A0 – A14), data inputs (D0 – D8), and all control signals except
output enable (G) are clock (K) controlled through positive–edge–triggered
noninverting registers.
Bursts can be initiated with either address status processor (ADSP) or address
status cache controller (ADSC) input pins. Subsequent burst addresses can be
generated internally by the MCM62486B (burst sequence imitates that of the
i486 and Pentium) and controlled by the burst address advance (ADV) input pin.
The following pages provide more detailed information on burst controls.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased flexibility for incoming signals.
The MCM62486B will be available in a 44–pin plastic leaded chip carrier
(PLCC). Multiple power and ground pins have been utilized to minimize effects
induced by output noise. Separate power and ground pins have been employed
for DQ0 – DQ8 to allow user–controlled output levels of 5 volts or 3.3 volts.
Single 5 V
±
10% Power Supply (
±
5% for MCM62486BFN11)
Choice of 5 V or 3.3 V
±
10% Power Supplies for Output Level
Compatibility
Fast Access Times:11/12/14/19 ns Max and Cycle Times:15/20/25 ns Min
Internal Input Registers (Address, Data, Control)
Internally Self–Timed Write Cycle
ADSP, ADSC, and ADV Burst Control Pins
Asynchronous Output Enable Controlled Three–State Outputs
Common Data Inputs and Data Outputs
High Output Drive Capability: 85 pF per I/O
High Board Density PLCC Package
Fully TTL–Compatible
Active High and Low Chip Select Inputs for Easy Depth Expansion
BurstRAM is a trademark of Motorola, Inc.
i486 and Pentium are trademarks of Intel Corp.
Order this document
by MCM62486B/D
SEMICONDUCTOR TECHNICAL DATA
FN PACKAGE
44–LEAD PLCC
CASE 777–01
MCM62486B
PIN NAMES
PIN ASSIGNMENT
A11
A12
A13
A14
VSS
DQ7
DQ6
VSSQ
VCCQ
DQ5
DQ4
A2
A3
A4
A5
A6
DQ0
DQ1
VSSQ
VCCQ
DQ2
VSS
A
A
K
V
A
A
A
A
D
V
V
V
W
G
S
S
D
V
A
A
A0 – A14
K
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
W
. . . . . . . . . . . . . . . . . . . . . . . .
G
. . . . . . . . . . . . . . . . . . . . . .
S0, S1
. . . . . . . . . . . . . . . . . . . .
ADV
. . . . . . . . . . . .
ADSP, ADSC
. . . . . . . . . . . .
DQ0 – DQ8
. . . . . . . . . . .
VCC
. . . . . . . . . . . . . . . .
VCCQ
Output Buffer Power Supply
. . . . . . .
VSS
. . . . . . . . . . . . . . . . . . . . . . . . . .
VSSQ
. . . . . . . . . . . .
Address Inputs
. . . . . . . . . . . . . . . .
Clock
Write Enable
Output Enable
Chip Selects
Burst Address Advance
Address Status
Data Input/Output
+ 5 V Power Supply
Ground
Output Buffer Ground
All power supply and ground pins must be con-
nected for proper operation of the device. VCC
≥
VCCQ at all times including power up.
6
5 4
3 2 1 44 43 42 41 40
10
11
9
8
12
13
15
16
14
17
7
32
31
33
29
30
35
34
36
37
38
39
18 19 20 21 22 23 24 25 26 27 28
V
A
REV 2
5/95
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MCM62486BFN11 | 32K x 9 Bit BurstRAM Synchronous Static RAM |
| MCM62486BFN12 | 32K x 9 Bit BurstRAM Synchronous Static RAM |
| MCM62486BFN14 | 32K x 9 Bit BurstRAM Synchronous Static RAM |
| MCM62486BFN19 | Replaced by PTH12000W : |
| MCM6249 | 1M x4 Bit Static Random Access Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MCM62486BFN11 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 9 Bit BurstRAM Synchronous Static RAM |
| MCM62486BFN12 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 9 Bit BurstRAM Synchronous Static RAM |
| MCM62486BFN14 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 9 Bit BurstRAM Synchronous Static RAM |
| MCM62486BFN19 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:32K x 9 Bit BurstRAM Synchronous Static RAM |
| MCM6249 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:1M x4 Bit Static Random Access Memory |
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