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參數資料
| 型號： | MCM6265C |
| 廠商： | Motorola, Inc. |
| 英文描述： | 8K x 9 Bit Fast Static RAM |
| 中文描述： | 8K的× 9位快速靜態存儲器 |
| 文件頁數： | 2/8頁 |
| 文件大小： | 177K |
| 代理商： | MCM6265C |
MCM6265C
2
MOTOROLA FAST SRAM
TRUTH TABLE
(X = Don’t Care)
E1
E2
G
W
Mode
VCC Current
ISB1, ISB2
ISB1, ISB2
ICCA
ICCA
ICCA
Output
Cycle
H
X
L
L
L
X
L
H
H
H
X
X
H
L
X
X
X
H
H
L
Not Selected
Not Selected
Output Disabled
Read
Write
High–Z
High–Z
High–Z
Dout
High–Z
—
—
—
Read Cycle
Write Cycle
ABSOLUTE MAXIMUM RATINGS
(See Note)
Rating
Symbol
Value
Unit
Power Supply Voltage
VCC
– 0.5 to + 7.0
V
Voltage Relative to VSS for Any Pin
Except VCC
Vin, Vout
– 0.5 to VCC + 0.5
V
Output Current
Iout
±
20
mA
Power Dissipation
PD
1.0
W
Temperature Under Bias
Tbias
– 10 to + 85
°
C
Operating Temperature
TA
0 to + 70
°
C
Storage Temperature — Plastic
Tstg
– 55 to + 125
°
C
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for
extended periods of time could affect device reliability.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VCC = 5.0 V
±
10%, TA = 0 to +70
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage (Operating Voltage Range)
VCC
VIH
VIL
4.5
5.0
5.5
V
Input High Voltage
2.2
—
VCC + 0.3**
0.8
V
Input Low Voltage
*VIL (min) = – 0.5 V dc; VIL (min) = – 2.0 V ac (pulse width
≤
20 ns)
**VIH (max) = VCC + 0.3 V dc; VIH (max) = VCC + 2 V ac (pulse width
≤
20 ns)
– 0.5*
—
V
DC CHARACTERISTICS
Parameter
Symbol
Min
Max
Unit
Input Leakage Current (All Inputs, Vin = 0 to VCC)
Output Leakage Current (E1 = VIH, E2 = VIL, or G = VIH, Vout = 0 to VCC)
Output Low Voltage (IOL = 8.0 mA)
Output High Voltage (IOH = – 4.0 mA)
Ilkg(I)
Ilkg(O)
VOL
VOH
—
±
1
μ
A
—
±
1
μ
A
—
0.4
V
2.4
—
V
POWER SUPPLY CURRENTS
Parameter
Symbol
– 12
– 15
– 20
– 25
– 35
Unit
AC Active Supply Current (Iout = 0 mA, VCC = Max, f = fmax)
AC Standby Current (E1 = VIH or E2 = VIL, VCC = Max, f = fmax)
Standby Current (E1
≥
VCC – 0.2 V or E2
≤
VSS + 0.2 V,
Vin
≤
VSS + 0.2 V or
≥
VCC – 0.2 V)
ICCA
ISB1
ISB2
150
140
130
120
110
mA
45
40
35
30
30
mA
20
20
20
20
20
mA
CAPACITANCE
(f = 1 MHz, dV = 3 V, TA = 25
°
C, Periodically Sampled Rather Than 100% Tested)
Parameter
Symbol
Max
Unit
Address Input Capacitance
Cin
Cin
CI/O
6
pF
Control Pin Input Capacitance (E1, E2, G, W)
6
pF
I/O Capacitance
7
pF
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid
application of any voltage higher than maxi-
mum rated voltages to these high–impedance
circuits.
This CMOS memory circuit has been de-
signed to meet the dc and ac specifications
shown in the tables, after thermal equilibrium
has been established. The circuit is in a test
socket or mounted on a printed circuit board
and transverse air flow of at least 500 linear
feet per minute is maintained.
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