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參數資料
| 型號： | MCM6265CP12 |
| 廠商： | MOTOROLA INC |
| 元件分類： | DRAM |
| 英文描述： | 8K x 9 Bit Fast Static RAM |
| 中文描述： | 8K X 9 STANDARD SRAM, 12 ns, PDIP28 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-28 |
| 文件頁數： | 5/8頁 |
| 文件大小： | 177K |
| 代理商： | MCM6265CP12 |
MCM6265C
5
MOTOROLA FAST SRAM
WRITE CYCLE 1
(W Controlled, See Notes 1, 2, and 3)
– 12
– 15
– 20
– 25
– 35
Parameter
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Min
Max
Unit
Notes
Write Cycle Time
tAVAV
tAVWL
tAVWH
tWLWH,
tWLEH
12
—
15
—
20
—
25
—
35
—
ns
4
Address Setup Time
0
—
0
—
0
—
0
—
0
—
ns
Address Valid to End of Write
10
—
12
—
15
—
17
—
20
—
ns
Write Pulse Width
10
—
12
—
15
—
17
—
20
—
ns
Write Pulse Width, G High
tWLWH,
tWLEH
8
—
10
—
12
—
15
—
17
—
ns
5
Data Valid to End of Write
tDVWH
tWHDX
tWLQZ
tWHQX
tWHAX
6
—
7
—
8
—
10
—
12
—
ns
Data Hold Time
0
—
0
—
0
—
0
—
0
—
ns
Write Low to Output High–Z
0
6
0
7
0
8
0
10
0
12
ns
6, 7, 8
Write High to Output Active
4
—
4
—
4
—
4
—
4
—
ns
6, 7, 8
Write Recovery Time
0
—
0
—
0
—
0
—
0
—
ns
NOTES:
1. A write occurs during the overlap of E low and W low.
2. E1 and E2 are represented by E in this data sheet. E2 is of opposite polarity to E.
3. If G goes low coincident with or after W goes low, the output will remain in a high impedance state.
4. All timings are referenced from the last valid address to the first transitioning address.
5. If G
≥
VIH, the output will remain in a high impedance state.
6. At any given voltage and temperature, tWLQZ (max) is less than tWHQX (min), both for a given device and from device to device.
7. Transition is measured
±
500 mV from steady–state voltage with load of Figure 1B.
8. This parameter is sampled and not 100% tested.
WRITE CYCLE 1
(W Controlled, See Notes 1, 2, and 3)
DATA VALID
tDVWH
tAVWL
tAVWH
tAVAV
tWHAX
tWLWH
tWHDX
tWLQZ
tWHQX
HIGH–Z
HIGH–Z
A (ADDRESS)
W (WRITE ENABLE)
E (CHIP ENABLE)
Q (DATA OUT)
D (DATA IN)
tWLEH
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