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參數資料
| 型號： | MGSF1N03LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | CHOKE, POWER, SHIELDED, 47UH; Inductor type:Shielded Power Choke; Inductance:47uH; Tolerance, inductance:30%; Resistance:250mR; Frequency, resonant:10MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes |
| 中文描述： | 750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁數： | 5/6頁 |
| 文件大小： | 183K |
| 代理商： | MGSF1N03LT1 |
5
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
D
J
K
L
A
C
B S
H
G
V
3
1
2
CASE 318–08
ISSUE AE
SOT–23 (TO–236AB)
DIM
A
B
C
D
G
H
J
K
L
S
V
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0180
0.0350
0.0830
0.0177
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0236
0.0401
0.0984
0.0236
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.45
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.60
1.02
2.50
0.60
MILLIMETERS
INCHES
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
STYLE 21:
PIN 1.
GATE
SOURCE
DRAIN
2.
3.
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| MGSF1N03LT3 | CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance:+/-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes |
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相關代理商/技術參數 |
參數描述 |
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| MGSF1N03LT1G | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1N03LT1G-CUT TAPE | 制造商:ON 功能描述:MGSF Series N-Channel 30 V 80 mOhm 0.73 W Surface Mount Power MOSFET - SOT-23 |
| MGSF1N03LT3 | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1N03LT3G | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1P02 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Power MOSFET P-Channel |
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