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參數(shù)資料
| 型號(hào)： | MGSF1N03LT3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 |
| 中文描述： | 1600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | MINIATURE, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 183K |
| 代理商： | MGSF1N03LT3 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 3. On–Resistance versus Drain Current
Figure 4. On–Resistance versus Drain Current
Figure 5. On–Resistance Variation with Temperature
0.001
0.1
1
Figure 6. Gate Charge
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
I
0
0.1
0.2
0.3
0.9
0.01
0.4
Figure 8. Capacitance
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
C
0
8
16
20
4
12
Ciss
Coss
Crss
350
50
VGS = 0 V
f = 1 MHz
TJ = 25
°
C
0
0.5
0.6
0.7
0.8
R
0
0.2
0.4
0.6
0.8
0.04
0.14
ID, DRAIN CURRENT (AMPS)
25
°
C
VGS = 4.5 V
0.09
0.1
0.3
0.5
0.7
150
°
C
–55
°
C
0.9
1
0.24
0.19
R
0
0.4
0.8
1.2
1.6
0.04
0.1
0.12
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
0.08
0.06
0.14
0.2
0.6
1
1.4
1.8
2
25
°
C
150
°
C
–55
°
C
R
(
0
–55
0.8
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 2 A
0
50
100
150
0.2
0.4
0.6
1
1.2
1.4
1.6
VGS = 4.5 V
ID = 1 A
V
0
10
6
2
0
QT, TOTAL GATE CHARGE (pC)
8
4
1000
6000
VDS = 24 V
TJ = 25
°
C
2000
ID = 2.0 A
3000
5000
4000
TJ = 150
°
C
–55
°
C
25
°
C
0.16
1.8
–25
25
75
125
100
150
200
250
300
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PDF描述 |
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| MGSF1N03LT3G | Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 |
| MGSF1N03LT3 | CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance:+/-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF1N03LT3G | 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF1P02 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Power MOSFET P-Channel |
| MGSF1P02ELT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02ELT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02LT1 | 功能描述:MOSFET P-CH 20V 750MA SOT-23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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