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參數資料
| 型號： | MGSF1P02LT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁數： | 2/6頁 |
| 文件大小： | 195K |
| 代理商： | MGSF1P02LT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10
μ
Adc)
V(BR)DSS
20
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS(1)
IDSS
—
—
—
—
1.0
10
μ
Adc
IGSS
—
—
±
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 1.5 Adc)
(VGS = 4.5 Vdc, ID = 0.75 Adc)
rDS(on)
—
—
0.235
0.375
0.350
0.500
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
Coss
Crss
—
100
—
pF
Output Capacitance
—
90
—
Transfer Capacitance
—
40
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
RL = 50
)
td(on)
tr
td(off)
tf
—
2.5
—
ns
Rise Time
(VDD = 15 Vdc, ID = 1.0 Adc,
—
1.0
—
Turn–Off Delay Time
—
16
—
Fall Time
—
8.0
—
Gate Charge (See Figure 6)
QT
—
6000
—
pC
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
ISM
VSD
—
—
0.6
A
Pulsed Current
Forward Voltage(2)
—
—
0.75
—
1.5
—
V
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.75
1
0.25
1.5
0.5
Figure 1. Transfer Characteristics
1
1.5
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
2
2.5
3
ID
Figure 2. On–Region Characteristics
VDS = 10 V
TJ = 150
°
C
25
°
C
–55
°
C
0
2
4
10
0
0.75
1
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
ID
6
0.25
8
1.5
0.5
3.5
1.25
1.25
1
3
9
5
7
3.25 V
2.75 V
2.25 V
2.5 V
3.0 V
VGS = 3.5 V
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| MGSF2N02ELT1 | 功能描述:MOSFET 20V 2.8A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MGSF2N02ELT1G | 功能描述:MOSFET NFET SOT23 20V 2.8A 85mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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