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參數資料
| 型號： | MGSF1P02LT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 750 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 文件頁數： | 3/6頁 |
| 文件大小： | 195K |
| 代理商： | MGSF1P02LT3 |
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
R
(
R
Figure 3. On–Resistance versus Drain Current
0
0.2
0.4
0.6
0.8
0.35
0.5
0.55
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance Variation with Temperature
0.8
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 6. Gate Charge
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
I
25
°
C
VGS = 4.5 V
VGS = 10 V
ID = 1.5 A
–55
–5
45
95
145
TJ = 150
°
C
0.45
0.85
0.9
0.95
0
0.2
0.4
0.6
1.8
0.4
0.01
–55
°
C
25
°
C
0.8
Figure 8. Capacitance
R
0
0.4
0.8
1.2
1.6
0.2
0.32
0.36
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
0.28
0.24
V
0
10
6
2
0
QT, TOTAL GATE CHARGE (pC)
8
4
1000
6000
VDS = 16 V
TJ = 25
°
C
2000
ID = 1.5 A
3000
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
C
0
4
8
10
2
6
Ciss
Coss
Crss
1000
100
VGS = 0 V
f = 1 MHz
TJ = 25
°
C
10
0.1
0.3
0.5
0.7
150
°
C
–55
°
C
0.4
0.3
0.34
0.26
0.22
0.38
0.2
0.6
1
1.4
1.05
1.25
1.1
1.15
1.2
VGS = 4.5 V
ID = .75 A
5000
4000
1
1.2
1.4
1.6
150
°
C
25
°
C
–55
°
C
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