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參數(shù)資料
| 型號： | MGSF3441XT3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors |
| 中文描述： | 1500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 94K |
| 代理商： | MGSF3441XT3 |
MGSF3441XT1
2
Motorola SmallSignal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 10
μ
A)
V
(BR)DSS
20
—
—
Vdc
Zero Gate Voltage Drain Current
(V
DS
= 20 Vdc, V
GS
= 0 Vdc)
(V
DS
= 20 Vdc, V
GS
= 0 Vdc, T
J
= 70
°
C)
I
DSS
—
—
—
—
1.0
4.0
μ
Adc
GateBody Leakage Current (V
GS
=
±
8.0 Vdc, V
DS
= 0)
I
GSS
—
—
±
100
nAdc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
μ
Adc)
V
GS(th)
0.45
—
—
Vdc
Static DraintoSource OnResistance
(V
GS
= 4.5 Vdc, I
D
= 1.5 A)
(V
GS
= 2.5 Vdc, I
D
= 1.2 A)
r
DS(on)
—
—
0.078
0.110
0.100
0.135
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 5.0 V)
(V
DS
= 5.0 V)
C
iss
C
oss
—
90
—
pF
Output Capacitance
—
50
—
Transfer Capacitance
(V
DG
= 5.0 V)
C
rss
—
10
—
SWITCHING CHARACTERISTICS
(2)
TurnOn Delay Time
t
d(on)
—
27
50
ns
Rise Time
= 15
= 1.0 A,
(V
DD
15
Vdc, I
D
1.0 A,
V
GEN
= 10 V, R
L
= 10
)
t
r
—
17
30
TurnOff Delay Time
t
d(off)
—
52
80
Fall Time
t
f
—
45
70
Gate Charge
Q
T
—
3000
—
pC
SOURCEDRAIN DIODE CHARACTERISTICS
Continuous Current
I
S
—
—
1.0
A
Pulsed Current
I
SM
—
—
20
A
Forward Voltage
(2)
V
SD
—
0.80
1.2
V
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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相關代理商/技術參數(shù) |
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|---|---|
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