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參數資料
| 型號： | MGSF3454XT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| 中文描述： | 1750 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數： | 4/6頁 |
| 文件大小： | 125K |
| 代理商： | MGSF3454XT1 |
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 7. Source–Drain Diode Forward Voltage
Figure 8. On–Resistance vs. Gate–to–Source Voltage
Figure 9. Threshold Voltage
N
T
Square Wave Pulse Duration (sec)
2
0.1
0.01
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
Figure 10. Single Pulse Power
Figure 11. Normalized Thermal Transient Impedance, Junction–to–Ambient
TJ, TEMPERATURE (
°
C)
25
50
75
100
125
ID = 250
μ
A
150
–0.8
0.4
0.2
0.0
–0.2
–0.4
–0.6
0
VSD, SOURCE–TO–DRAIN VOLTAGE (V)
I
1
10
40
TJ = 150
°
C
0
0.25
0.50
0.75
1.00
1.25
1.5
1.75
0
2
VGS – GATE–TO–SOURCE VOLTAGE (V)
4
6
8
10
0
0.04
0.08
0.12
R
0.16
0.20
ID = 4.2 A
0.01
0.10
1.00
10.00
0
6
12
18
P
TIME (sec)
24
30
TJ = 25
°
C
–25
–50
V
,
G
1
0.2
Duty Cycle = 0.5
0.05
SINGLE PULSE
0.1
0.02
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
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