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參數資料
| 型號： | MH16D72AKLB-75 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | JT 41C 41#20 PIN GRND PLUG |
| 中文描述： | 1,207.959,552位（16,777,216 - Word的72位），雙數據速率同步DRAM模塊 |
| 文件頁數： | 23/39頁 |
| 文件大小： | 348K |
| 代理商： | MH16D72AKLB-75 |
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MITSUBISHI LSIs
MITSUBISHI ELECTRIC
MH16D72AKLB-10,75
1,207.959,552-BIT (16,777,216-WORD BY 72-BIT) Double Data Rate Synchronous DRAM Module
MIT-DS-0397-1.1
24.Nov.2000
Preliminary Spec.
Some contents are subject to change without notice.
23
READ
After tRCD from the bank activation, a READ command can be issued. 1st Output data is
available after the /CAS Latency from the READ, followed by (BL-1) consecutive data when the
Burst Length is BL. The start address is specified by A11,A9-A0, and the address sequence of burst data
is defined by the Burst Type. A READ command may be applied to any active bank, so the row
precharge time (tRP) can be hidden behind continuous output data by interleaving the
multiple banks. When A10 is high at a READ command, the auto-precharge(READA) is
performed. Any command(READ,WRITE,PRE,ACT) to the same bank is inhibited till the internal
precharge is complete. The internal precharge starts at BL/2 after READA. The next ACT
command can be issued after (BL/2+tRP) from the previous READA.
Multi Bank Interleaving READ (BL=8, CL=2(Discrete level))
/CLK
CLK
Command
A0-9,11
A10
BA0,1
DQ
ACT
Xa
Xa
00
READ
Y
0
00
READ
Y
0
10
ACT
Xb
Xb
10
PRE
0
00
tRCD
Burst Length
DQS
Qa0
Qa1 Qa2
Qa3
Qa4
Qa5
Qa6
Qa7
Qb0
Qb1
Qb2
Qb3
Qb4
Qb5
Qb7
Qb8
Module /CAS latency(Discrete CL + 1)
Module input and output timing.
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