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參數資料
| 型號： | MH16S64APHB-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
| 中文描述： | 1073741824位（16,777,216 -文字，64位）同步DRAM |
| 文件頁數： | 24/52頁 |
| 文件大小： | 1042K |
| 代理商： | MH16S64APHB-6 |
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MH16S64AMA -8,-10,-12
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 52 )
24
MITSUBISHI
ELECTRIC
4. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0127-0.0
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank. Random
column access is allowed. Because the write recovery time(tWR) is required between
the last input data and the next PRE, 3rd data should be masked with DQMB0-7
shown as below.
Write Interrupted by Precharge (BL=4)
CK
Command
A10
DQ
Write
Yi
0
0
PRE
0
0
Dai0
Dai1
DQMB0-7
ACT
Xb
Xb
0
tWR
tRP
This data should be masked to satisfy tWR requirement.
[ Write Interrupted by Burst Terminate ]
Burst terminate command can terminate burst write operation. In this case, the write
recovery time is not required and the bank remains active. The figure below shows
the case 3 words of data are written. Random column access is allowed. WRITE to
TERM interval is minimum 1 CK.
Write Interrupted by Burst Terminate (BL=4)
CK
Command
A10
DQ
Write
Yi
0
0
TERM
Dai0
Dai1
DQMB0-7
Dai2
A0-9,11
BA0,1
A0-9,11
BA0,1
相關PDF資料 |
PDF描述 |
|---|---|
| MH16S64APHB-7 | 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
| MH16S64APHB-8 | 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
| MH16S64BAMD-10 | 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| MH16S64DAMD-8 | 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM |
| MH16S64FFB-10 | 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MH16S64APHB-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
| MH16S64APHB-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
| MH16S64BAMD-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| MH16S64BAMD-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
| MH16S64BAMD-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
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