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參數資料
| 型號： | MH16S64BAMD-10 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| 中文描述： | 1073741824位（16777216 -文字，64位）SynchronousDRAM |
| 文件頁數： | 23/52頁 |
| 文件大小： | 1042K |
| 代理商： | MH16S64BAMD-10 |
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MH16S64AMA -8,-10,-12
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI LSIs
( 23
MITSUBISHI
ELECTRIC
4. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0127-0.0
[ Write Interrupted by Write ]
Burst write operation can be interrupted by new write of the same or the other bank.
Random column access is allowed. WRITE to WRITE interval is minimum 1 CK.
Write Interrupted by Write (BL=4)
CK
Command
A10
DQ
Write
Yi
0
0
Write
Yk
0
1
Dai0
Daj0
Daj1
Dbk0
Write
Yj
0
0
Dbk1 Dbk2
Write
Yl
0
0
Dal0
Dal1
Dal2
Dal3
[ Write Interrupted by Read ]
Burst write operation can be interrupted by read of the same or the other bank.
Random column access is allowed. WRITE to READ interval is minimum 1 CK. The
input data on DQ at the interrupting READ cycle is "don't care".
Write Interrupted by Read (BL=4, CL=3)
CK
Command
A10
DQ
Write
Yi
0
0
Qaj0
READ
Yj
0
0
Qaj1
Dai0
Dak0 Dak1
DQMB0-7
Write
Yk
0
0
READ
Yl
0
1
Qbl0
A0-9,11
BA0,1
A0-9,11
BA0,1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MH16S64BAMD-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
| MH16S64BAMD-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| MH16S64BAMD-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| MH16S64DAMD-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM |
| MH16S64DAMD-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM |
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