- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371105 > MH16S64DAMD-7 (Mitsubishi Electric Corporation) 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號： | MH16S64DAMD-7 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM |
| 中文描述： | 1073741824位（16777216 -文字，64位）同步DRAM |
| 文件頁數(shù)： | 24/52頁 |
| 文件大小： | 1042K |
| 代理商： | MH16S64DAMD-7 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當(dāng)前第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁
MH16S64AMA -8,-10,-12
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 52 )
24
MITSUBISHI
ELECTRIC
4. Mar.1997
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0127-0.0
[ Write Interrupted by Precharge ]
Burst write operation can be interrupted by precharge of the same bank. Random
column access is allowed. Because the write recovery time(tWR) is required between
the last input data and the next PRE, 3rd data should be masked with DQMB0-7
shown as below.
Write Interrupted by Precharge (BL=4)
CK
Command
A10
DQ
Write
Yi
0
0
PRE
0
0
Dai0
Dai1
DQMB0-7
ACT
Xb
Xb
0
tWR
tRP
This data should be masked to satisfy tWR requirement.
[ Write Interrupted by Burst Terminate ]
Burst terminate command can terminate burst write operation. In this case, the write
recovery time is not required and the bank remains active. The figure below shows
the case 3 words of data are written. Random column access is allowed. WRITE to
TERM interval is minimum 1 CK.
Write Interrupted by Burst Terminate (BL=4)
CK
Command
A10
DQ
Write
Yi
0
0
TERM
Dai0
Dai1
DQMB0-7
Dai2
A0-9,11
BA0,1
A0-9,11
BA0,1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MH16S72AMA-10 | 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM |
| MH16S72AMA-12 | JT 22C 22#22D PIN WALL RECP |
| MH16S72AMA-8 | Circular Connector; No. of Contacts:3; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:12-3 RoHS Compliant: No |
| MH16S72DDFA-7 | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH16S72DDFA-8 | 1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH16S64DAMD-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)Synchronous DRAM |
| MH16S64FFB-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| MH16S64FFB-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| MH16S64PFC-10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
| MH16S64PFC-10L | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。