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參數資料
| 型號： | MMBT2222AWT1 |
| 廠商： | 樂山無線電股份有限公司 |
| 英文描述： | Preliminary Information General Purpose Transistors |
| 中文描述： | 初步信息通用晶體管 |
| 文件頁數： | 2/8頁 |
| 文件大?。?/td> | 253K |
| 代理商： | MMBT2222AWT1 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55
°
C)
(IC = 150 mAdc, VCE = 10 Vdc) (3)
(IC = 150 mAdc, VCE = 1.0 Vdc) (3)
(IC = 500 mAdc, VCE = 10 Vdc) (3)
MMBT2222A only
MMBT2222
MMBT2222A
hFE
35
50
75
35
100
50
30
40
—
—
—
—
300
—
—
—
—
Collector–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VCE(sat)
—
—
—
—
0.4
0.3
1.6
1.0
Vdc
Base–Emitter Saturation Voltage (3)
(IC = 150 mAdc, IB = 15 mAdc)
MMBT2222
MMBT2222A
(IC = 500 mAdc, IB = 50 mAdc)
MMBT2222
MMBT2222A
VBE(sat)
—
0.6
—
—
1.3
1.2
2.6
2.0
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (4)
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
MMBT2222
MMBT2222A
fT
250
300
—
—
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
—
8.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
MMBT2222
MMBT2222A
Cibo
—
—
30
25
pF
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hie
2.0
0.25
8.0
1.25
k
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hre
—
—
8.0
4.0
X 10–4
Small–Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hfe
50
75
300
375
—
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
MMBT2222A
MMBT2222A
hoe
5.0
25
35
200
mhos
Collector Base Time Constant
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
MMBT2222A
rb, Cc
—
150
ps
Noise Figure
(IC = 100 Adc, VCE = 10 Vdc, RS = 1.0 k
, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (MMBT2222A only)
MMBT2222A
NF
—
4.0
dB
Delay Time
IC = 150 mAdc, IB1 = 15 mAdc)
td
tr
ts
tf
—
10
ns
Rise Time
(VCC = 30 Vdc, VBE(off) = –0.5 Vdc,
—
25
Storage Time
IB1 = IB2 = 15 mAdc)
—
225
ns
Fall Time
(VCC = 30 Vdc, IC = 150 mAdc,
—
60
3. Pulse Test: Pulse Width
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
300 s, Duty Cycle
2.0%.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MMBT2222AWT1_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:General Purpose Transistor |
| MMBT2222AWT1G | 功能描述:兩極晶體管 - BJT 600mA 75V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2222AWT1GOSDKR-ND | 制造商: 功能描述: 制造商:undefined 功能描述: |
| MMBT2222AWT1H | 制造商:ON Semiconductor 功能描述: |
| MMBT2222AWT3G | 功能描述:兩極晶體管 - BJT SS SC70 GP XSTR NPN 40V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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