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參數(shù)資料
| 型號(hào)： | MMBT2369A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN Switching Transistor |
| 中文描述： | 200 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大小： | 304K |
| 代理商： | MMBT2369A |
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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How to reach us:
USA/EUROPE
: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
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: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBT2369LT1 | Switching Transistors(NPN Silicon) |
| MMBT2369ALT1 | Switching Transistors(NPN Silicon) |
| MMBT2484LT1 | Low Noise Transistor |
| MMBT2484 | Mini size of Discrete semiconductor elements |
| MMBT2484LT1 | Low Noise Transistor(NPN Silicon) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBT2369A | 制造商:Fairchild Semiconductor Corporation 功能描述:RF BIPOLAR TRANSISTOR ROHS COMPLIANT:NO |
| MMBT2369A | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-23 |
| MMBT2369A_Q | 功能描述:兩極晶體管 - BJT Switching Transistor NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBT2369AL | 制造商:Motorola Inc 功能描述:Bipolar Junction Transistor, NPN Type, SOT-23 |
| MMBT2369ALT1 | 功能描述:兩極晶體管 - BJT 200mA 15V Switching RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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