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參數資料
| 型號： | MMBTA56 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | PNP (DRIVER TRANSISTOR) |
| 中文描述： | 進步黨（驅動晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 77K |
| 代理商： | MMBTA56 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
MMBTA55
MMBTA56
Unit
Collector–Emitter Voltage
VCEO
VCBO
VEBO
IC
–60
–80
Vdc
Collector–Base Voltage
–60
–80
Vdc
Emitter–Base Voltage
–4.0
Vdc
Collector Current — Continuous
–500
mAdc
DEVICE MARKING
MMBTA55LT1 = 2H; MMBTA56LT1 = 2GM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board,(1)
TA = 25
°
C
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
PD
225
1.8
mW
mW/
°
C
°
C/W
mW
RJA
PD
556
Total Device Dissipation
Alumina Substrate,(2) TA = 25
°
C
Derate above 25
°
C
Thermal Resistance, Junction to Ambient
300
2.4
mW/
°
C
°
C/W
°
C
RJA
TJ, Tstg
417
Junction and Storage Temperature
–55 to +150
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0)
Emitter–Base Breakdown Voltage (IE = –100 Adc, IC = 0)
Collector Cutoff Current (VCE = –60 Vdc, IB = 0)
Collector Cutoff Current (VCB = –60 Vdc, IE = 0)
Collector Cutoff Current
(VCB = –80 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain (IC = –10 mAdc, VCE = –1.0 Vdc)
DC Current Gain
(IC = –100 mAdc, VCE = –1.0 Vdc)
Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –10 mAdc)
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –1.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4)
(IC = –100 mAdc, VCE = –1.0 Vdc, f = 100 MHz)
MMBTA55
MMBTA56
V(BR)CEO
–60
–80
—
—
Vdc
V(BR)EBO
ICES
ICBO
–4.0
—
Vdc
—
–0.1
μ
Adc
μ
Adc
MMBTA55
MMBTA56
—
—
–0.1
–0.1
hFE
100
100
—
—
—
VCE(sat)
VBE(on)
—
–0.25
Vdc
—
–1.2
Vdc
fT
50
—
MHz
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
Order this document
by MMBTA55LT1/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR
3
1
BASE
2
EMITTER
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| MMBTA56_D87Z | 功能描述:兩極晶體管 - BJT PNP Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56_Q | 功能描述:兩極晶體管 - BJT SOT-23 PNP GEN PUR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56-7 | 功能描述:兩極晶體管 - BJT 100V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MMBTA56-7-F | 功能描述:兩極晶體管 - BJT 100V 300mW RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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