- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361178 > Q62702-A1211 (SIEMENS AG) Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-A1211 |
| 廠(chǎng)商： | SIEMENS AG |
| 英文描述： | Silicon PIN Diode (PIN diode for high speed switching of RF signals, Low forward resistance, small capacitance small inductance) |
| 中文描述： | 硅PIN二極管（PIN二極管高速的射頻信號(hào)，低正向電阻，小電容小電感開(kāi)關(guān)） |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-A1211 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-A1214 | Silicon Rf Switching Diode Preliminary data |
| Q62702-A1215 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| Q62702-A1216 | Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners) |
| Q62702-A1223 | Silicon Schottky Diodes (Parallel connection for maximum IF per package Low forward voltage drop For power supply) |
| Q62702-A1239 | CAP CER 680PF 250VAC X1Y2 RAD |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-A1214 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon Rf Switching Diode Preliminary data |
| Q62702-A1215 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| Q62702-A1216 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners) |
| Q62702-A1223 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon Schottky Diodes (Parallel connection for maximum IF per package Low forward voltage drop For power supply) |
| Q62702-A1231 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:Silicon Switching Diode Preliminary data (For high-speed switching applications) |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。