- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361178 > Q62702-D1066 (SIEMENS AG) Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-D1066 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| 中文描述： | 硅肖特基二極管（培養(yǎng)基檢測(cè)器和調(diào)音臺(tái)的應(yīng)用氣密陶瓷封裝壘二極管） |
| 文件頁(yè)數(shù)： | 5/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-D1066 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-F1794 | NPN Silicon RF Transistor (For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V) |
| Q62702-F201 | NPN Silicon RF Transisrors |
| Q62702-F202 | NPN Silicon RF Transisrors |
| Q62702-A1198 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| Q62702-A120 | Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-D1068 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON PLANAR TRANSISTOR |
| Q62702-D1069 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON PLANAR TRANSISTOR |
| Q62702-D106-P | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON TRANSISTORS |
| Q62702-D106-V1 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON TRANSISTORS |
| Q62702-D106-V2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON TRANSISTORS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。