- 您現在的位置：買賣IC網 > PDF目錄361193 > Q62702-D1342 (SIEMENS AG) PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) PDF資料下載
參數資料
| 型號： | Q62702-D1342 |
| 廠商： | SIEMENS AG |
| 英文描述： | PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
| 中文描述： | 自動對焦進步黨硅功率晶體管輸出級驅動器和集電極電流的高電流增益高（為自動） |
| 文件頁數： | 9/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-D1342 |
BGC420
High Frequency Products
9
Edition A13, 05/99
*****
.MODEL TL18 PNP
+IS = 2.914E-17 NF = 1.000E+00 BF = 4.005E+02
+NE = 1.553E+00 ISE = 6.923E-16 NR = 1.000E+00
+BR = 2.869E+01 NC = 1.500E+00 ISC = 8.190E-15
+VAF = 6.000E+01 IKF = 1.676E-04 VAR = 2.214E+00
+IKR = 2.474E-05 RB = 6.000E+01 IRB = 0.000E+00
+RBM = 4.000E+01 RE = 2.597E+00 RC = 4.000E+00
+XTB =-6.000E-01 EG = 1.156E+00 XTI = 3.000E+00
+CJE = 1.200E-14 VJE = 4.900E-01 MJE = 1.360E-01
+TF = 7.600E-10 XTF = 2.872E-01 VTF = 1.000E+03
+ITF = 1.400E-02 CJC = 4.700E-13 VJC = 7.610E-01
+MJC = 3.760E-01 XCJC = 1.000E+00 TR = 0.000E+00
+CJS = 0.000E+00 VJS = 7.500E-01 MJS = 0.000E+00
+PTF = 0.000E+00 FC = 5.000E-01
*****
.MODEL VSL18 PNP
+IS = 1.630E-19 NF = 1.000E+00 BF = 1.000E+09
+NE = 1.500E+00 ISE = 0.000E+00 NR = 1.000E+00
+BR = 1.000E+09 NC = 2.000E+00 ISC = 0.000E+00
+VAF = 1.000E+02 IKF = 1.794E-04 VAR = 1.700E+00
+IKR = 1.000E+00 RB = 0.000E+00 IRB = 0.000E+00
+RBM = 0.000E+00 RE = 0.000E+00 RC = 0.000E+00
+XTB = 0.000E+00 EG = 1.122E+00 XTI = 3.000E+00
+CJE = 0.000E+00 VJE = 6.800E-01 MJE = 3.400E-01
+TF = 2.000E-09 XTF = 0.000E+00 VTF = 1.000E+03
+ITF = 1.000E+06 CJC = 1.950E-13 VJC = 5.500E-01
+MJC = 3.770E-01 XCJC = 0.000E+00 TR = 0.000E+00
+CJS = 0.000E+00 VJS = 7.500E-01 MJS = 0.000E+00
+PTF = 0.000E+00 FC = 5.000E-01
*****
.MODEL LSL18 PNP
+IS = 4.261E-17 NF = 1.000E+00 BF = 1.000E+09
+NE = 1.500E+00 ISE = 0.000E+00 NR = 1.000E+00
+BR = 1.000E+09 NC = 2.000E+00 ISC = 0.000E+00
+VAF = 6.000E+01 IKF = 9.648E-05 VAR = 1.700E+00
+IKR = 1.000E+00 RB = 0.000E+00 IRB = 0.000E+00
+RBM = 0.000E+00 RE = 0.000E+00 RC = 0.000E+00
+XTB = 0.000E+00 EG = 1.158E+00 XTI = 3.000E+00
+CJE = 0.000E+00 VJE = 6.800E-01 MJE = 3.400E-01
+TF = 1.000E-09 XTF = 0.000E+00 VTF = 1.000E+03
+ITF = 1.000E+06 CJC = 0.000E+00 VJC = 4.600E-01
+MJC = 3.000E-01 XCJC = 0.000E+00 TR = 0.000E+00
+CJS = 0.000E+00 VJS = 7.500E-01 MJS = 0.000E+00
+PTF = 0.000E+00 FC = 5.000E-01
*****
.END
相關PDF資料 |
PDF描述 |
|---|---|
| Q62702-D1343 | NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
| Q62702-D1344 | PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
| Q62702-D1347 | Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
| Q62702-D139-S1 | NPN SILICON TRANSISTORS |
| Q62702-D237 | NPN SILICON DARLINGTON TRANSISTORS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-D1343 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon AF Power Transistors (For AF drivers and output stages High collector current High current gain) |
| Q62702-D1344 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Power Transistor (For AF drivers and output stages High collector current High current gain) |
| Q62702D1345 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
| Q62702D1346 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) |
| Q62702-D1347 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Schottky Diode (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications) |
發布緊急采購，3分鐘左右您將得到回復。