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參數(shù)資料
| 型號： | Q62702-P1673 |
| 廠商： | SIEMENS AG |
| 英文描述： | Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor |
| 中文描述： | 神經(jīng)：叩- Silizium - Fototransistor新：硅npn型光電晶體管 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-P1673 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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| Q62702P1674 | 制造商:OSRAM 功能描述:Phototransistor IR Chip Silicon 870nm 2-Pin T-1 3/4 制造商:OSRAM 功能描述:PHOTOTRANSISTOR IR CHIP SILICON NPN TRANSISTOR 870NM 2PIN T- - Bulk 制造商:OSRAM 功能描述:PHOTOTRANSISTOR NPN 870NM W/FLTR |
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| Q62702P1690 | 制造商:OSRAM 功能描述:EMITTER IR 950NM SMD |
| Q62702P1745 | 制造商:OSRAM 功能描述:LED IRLED 660NM 2PIN TO-18 - Bulk 制造商:OSRAM 功能描述:EMITTER IR 660NM TO-18 |
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