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參數資料
| 型號： | Q67060-S6111-A4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart High-Side Power Switch One Channel: 38mз Status Feedback |
| 中文描述： | 智能高側電源開關一個頻道：38mз狀態反饋 |
| 文件頁數： | 5/12頁 |
| 文件大?。?/td> | 261K |
| 代理商： | Q67060-S6111-A4 |
BTS436L2
Semiconductor Group
Page 5
2003-Oct-01
Parameter and Conditions
at
T
j
=-40...+150°C,
V
bb
= 12 V unless otherwise specified
Protection Functions
10)
Current limit (pin 3 to 5)
(see timing diagrams on page 11)
Repetitive short circuit shutdown current limit
T
j
=
T
jt
(see timing diagrams, page 11)
Thermal shutdown time
11)
(see timing diagrams on page 11)
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL)
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1)
12)
Reverse battery voltage drop
(V
out
> V
bb
)
13 )
I
L
= -2 A
Diagnostic Characteristics
Open load detection current
(on-condition)
Input and Status Feedback
14
)
Input resistance
see circuit page 7
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2),
V
IN
= 0.4 V
On state input current (pin 2),
V
IN
= 5 V
Delay time for status with open load
after switch off
(see timing diagrams on page 11)
Status output (open drain)
Zener limit voltage
ST low voltage
Symbol
Values
typ
Unit
min
max
I
L(lim)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
46
39
30
58
51
38
68
58
46
A
I
L(SCr)
t
off(SC)
--
--
40
1.9
--
--
A
T
j,start
= 25°C:
ms
I
L
= 40 mA:
V
ON(CL)
T
jt
T
jt
-
V
bb
-V
ON(rev)
41
43
150
47
--
10
--
52
--
--
32
V
°C
K
V
--
--
T
j
=150 °C:
--
600
--
mV
I
L (OL)
100
--
900
mA
R
I
2.5
3.5
6
k
V
IN(T+)
V
IN(T-)
V
IN(T)
I
IN(off)
I
IN(on)
t
d(ST OL4)
1.7
1.5
--
--
--
3.2
V
V
V
--
--
0.5
--
50
520
1
50
90
μ
A
μ
A
μ
s
20
100
900
V
ST(high)
V
ST(low)
I
ST
= +1.6 mA:
I
ST
= +1.6 mA:
5.4
--
6.1
--
--
0.4
V
10
)
Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11
)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70
μ
m thick) copper area for Vbb
connection. PCB is vertical without blown air.
12
)
Requires 150
resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 7).
13
)
not subject to production test, specified by design
14
)
If a ground resistor R
GND
is used, add the voltage drop across this resistor.
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相關代理商/技術參數 |
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|---|---|
| Q67060-S6112-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз |
| Q67060-S6112-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз |
| Q67060-S6112-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз |
| Q67060-S6118 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз Status Feedback |
| Q67060-S6119 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch One Channel: 20mз Status Feedback |
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