- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361231 > Q67060-S6201-A5 (INFINEON TECHNOLOGIES AG) High Speed CMOS Logic Dual 4-Input NOR Gates 14-TSSOP -55 to 125 PDF資料下載
參數(shù)資料
| 型號(hào)： | Q67060-S6201-A5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed CMOS Logic Dual 4-Input NOR Gates 14-TSSOP -55 to 125 |
| 中文描述： | 智能阻抗高側(cè)電源開關(guān) |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 186K |
| 代理商： | Q67060-S6201-A5 |
BTS 432 D2
Infineon Technologies AG
Page 4
1999-Mar.-22
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
8
)
,
(
max 400
μ
s if V
ON
> V
ON(SC)
)
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
--
--
24
--
44
--
74
--
--
A
Repetitive short circuit current limit
T
j
=
T
jt
(see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
min value valid only, if input "low" time exceeds 30
μ
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL),
I
L
= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
9)
,
T
j Start
= 150 °C, single pulse
Reverse battery (pin 3 to 1)
10
)
Integrated resistor in V
bb
line
I
L(SCr)
22
35
--
A
T
j
=-40..+150°C:
t
d(SC)
80
--
400
μ
s
V
ON(CL)
--
58
--
V
V
ON(SC)
T
jt
D
T
jt
E
AS
E
Load12
E
Load24
--
8.3
--
--
--
V
150
--
°C
K
--
--
10
--
V
bb
= 12 V:
V
bb
= 24 V:
1.7
1.3
1.0
J
-
V
bb
R
bb
--
--
--
32
--
V
120
Diagnostic Characteristics
Open load detection current
(on-condition)
T
j
=-40 °C
:
T
j
=25..150°C:
I
L (OL)
2
2
--
--
900
750
mA
7
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
8
)
Short circuit current limit for max. duration of 400
μ
s, prior to shutdown (see t
d(SC)
page 4)
9)
While demagnetizing load inductance, dissipated energy in PROFET is
E
AS
=
ò
V
ON(CL)
*
i
L
(t) dt, approx.
E
AS
=
1
/
2
*
L
*
I
2
V
ON(CL)
-
V
bb
), see diagram page 8
10
)Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current I
GND
of
≈
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under these
condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional external
GND-resistor (150
). Input and Status currents have to be limited (see max. ratings page 2 and circuit page
7).
L
* (
V
ON(CL)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q67060-S6202-A4 | Smart Highside Power Switch |
| Q67060-S6202-A6 | Smart Highside Power Switch |
| Q67060-S6202-A2 | Smart Highside Power Switch |
| Q67060-S6203-A2 | High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 |
| Q67060-S6203-A4 | High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67060-S6202-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6202-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6202-A6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6203-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6203-A4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。