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參數資料
| 型號： | Q67060-S6203-A4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 |
| 中文描述： | 智能阻抗高側電源開關 |
| 文件頁數： | 4/14頁 |
| 文件大?。?/td> | 305K |
| 代理商： | Q67060-S6203-A4 |
PROFET
BTS 432 F2
Infineon Technologies AG
4
22.03.99
Parameter and Conditions
at T
j
= 25
°
C, V
bb
= 12 V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)
8
)
,
(
max 400
μ
s if V
ON
> V
ON(SC)
)
I
L(SCp)
T
j
=-40
°
C:
T
j
=25
°
C:
T
j
=+150
°
C:
--
--
7
--
21
--
35
--
--
A
Repetitive short circuit current limit
T
j
= T
jt
(see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
V
ON
> V
ON(SC)
,
min value valid only, if input "low" time exceeds 30
μ
s
Output clamp (inductive load switch off)
at V
OUT
= V
bb
- V
ON(CL),
I
L
= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
9)
,
T
j Start
= 150
°
C, single pulse
Reverse battery (pin 3 to 1)
10
)
Integrated resistor in V
bb
line
I
L(SCr)
6
10
--
A
T
j
=-40..+150
°
C:
t
d(SC)
80
--
400
μ
s
V
ON(CL)
--
58
--
V
V
ON(SC)
T
jt
T
jt
E
AS
E
Load12
E
Load24
--
8.3
--
--
--
V
150
--
°
C
K
--
--
10
--
V
bb
= 12 V:
V
bb
= 24 V:
1.7
1.3
1.0
J
-V
bb
R
bb
--
--
--
32
--
V
120
Diagnostic Characteristics
Open load detection current
(on-condition)
T
j
=-40
°
C
:
T
j
=25..150
°
C:
I
L (OL)
2
2
--
--
900
750
mA
8
)
Short circuit current limit for max. duration of 400
μ
s, prior to shutdown (see t
d(SC)
page 4)
9)
While demagnetizing load inductance, dissipated energy in PROFET is E
AS
=
∫
V
ON(CL)
* i
L
(t) dt, approx.
E
AS
=
1
/
2
* L* I
2
V
- V
), see diagram page 8
10
)Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of
≈
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150
). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
L
* (
V
ON(CL)
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PDF描述 |
|---|---|
| Q67060-S6203-A6 | High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125 |
| Q67060-S6204-A2 | Smart Highside Power Switch |
| Q67060-S6204-A3 | Smart Highside Power Switch |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67060-S6203-A6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6204-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6204-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6206-A2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
| Q67060-S6206-A3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Smart Highside Power Switch |
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