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參數(shù)資料
| 型號： | Q67060-S6206-A4 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Smart Highside Power Switch |
| 中文描述： | 智能阻抗高側(cè)電源開關(guān) |
| 文件頁數(shù)： | 4/14頁 |
| 文件大小： | 284K |
| 代理商： | Q67060-S6206-A4 |
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
BTS 442 E2
Values
typ
max
Symbol
Unit
min
Semiconductor Group
4
2003-Oct-01
Protection Functions
8)
Initial peak short circuit current limit (pin 3 to 5)
9
)
,
(
max 400
μ
s if
V
ON
>
V
ON(SC)
)
Repetitive short circuit current limit
T
j
=
T
jt
(see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
V
ON
>
V
ON(SC)
,
min value valid only, if input "low" time exceeds 30
μ
s
Output clamp (inductive load switch off)
at
V
OUT
=
V
bb
-
V
ON(CL),
I
L
= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation
10)
,
T
j Start
= 150 °C, single pulse
Reverse battery (pin 3 to 1)
11
)
Integrated resistor in
V
bb
line
I
L(SCp)
T
j
=-40°C:
T
j
=25°C:
T
j
=+150°C:
--
--
45
--
95
--
140
--
--
A
I
L(SCr)
t
d(SC)
30
70
--
A
T
j
=-40..+150°C:
80
--
400
μ
s
V
ON(CL)
V
ON(SC)
T
jt
T
jt
E
AS
E
Load12
E
Load24
-
V
bb
R
bb
--
58
--
V
--
8.3
--
10
--
--
--
--
V
150
°C
K
--
--
V
bb
= 12 V:
V
bb
= 24 V:
2.1
1.7
1.2
J
--
--
--
32
--
V
120
Diagnostic Characteristics
Open load detection current
(on-condition)
T
j
=-40 °C
:
T
j
=25..150°C:
I
L (OL)
2
2
--
--
1900
1500
mA
8
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
9
) Short circuit current limit for max. duration of t
d(SC) max
=400
μ
s, prior to shutdown
10)
While demagnetizing load inductance, dissipated energy in PROFET is
E
AS
=
V
ON(CL)
*
i
L
(t) dt, approx.
E
AS
=
1
/
2
*
L
*
I
2
V
ON(CL)
-
V
bb
), see diagram page 8
11
) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.
Reverse current I
GND
of
≈
0.3 A at V
bb
= -32 V through the logic heats up the device. Time allowed under
these condition is dependent on the size of the heatsink. Reverse I
GND
can be reduced by an additional
external GND-resistor (150
). Input and Status currents have to be limited (see max. ratings page 2 and
circuit page 7).
L
* (
V
ON(CL)
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