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參數(shù)資料
| 型號(hào)： | Q67060-S6307-A6 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | High Speed CMOS Logic Dual 4-Stage Static Shift Registers 16-SOIC -55 to 125 |
| 中文描述： | 智能感知高端功率開關(guān) |
| 文件頁數(shù)： | 4/15頁 |
| 文件大小： | 240K |
| 代理商： | Q67060-S6307-A6 |
BTS 640 S2
Values
typ
max
Parameter and Conditions
at
T
j
= 25 °C,
V
bb
= 12 V unless otherwise specified
Symbol
Unit
min
Semiconductor Group
Page 4
2003-Oct-01
Operating Parameters
Operating voltage
5
)
Undervoltage shutdown
Undervoltage restart
Undervoltage restart of charge pump
see diagram page 13
Undervoltage hysteresis
V
bb(under) =
V
bb(u rst) -
V
bb(under)
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection
6
)
I
bb=40 mA
Standby current (pin 4)
V
IN=0
Off state output current (included in
I
bb(off)
)
V
IN=0,
Operating current
(Pin 2)7),
V
IN=5 V
T
j =-40...+150°C:
V
bb(on)
T
j =-40...+150°C:
V
bb(under)
T
j =-40...+25°C:
T
j =+150°C:
5.0
3.2
--
--
--
34
5.0
5.5
6.0
V
V
V
V
bb(u rst)
4.5
T
j =-40...+25°C:
T
j =25...150°C:
V
bb(ucp)
--
--
--
4.7
--
0.5
6.5
7.0
V
V
bb(under)
--
V
T
j =-40...+150°C:
V
bb(over)
T
j =-40...+150°C:
V
bb(o rst)
T
j =-40...+150°C:
V
bb(over)
T
j =-40°C:
T
j =+25...+150°C
34
33
--
41
43
--
--
1
--
47
43
--
--
--
52
V
V
V
V
V
bb(AZ)
T
j
=-40...+25°C
:
T
j
= 150°C:
I
bb(off)
--
--
--
4
12
--
15
25
10
μ
A
T
j =-40...+150°C:
I
L(off)
μ
A
I
GND
--
1.2
3
mA
5
) At supply voltage increase up to
V
bb
= 4.7 V typ without charge pump,
V
OUT
≈
V
bb
- 2 V
6)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 150
resistor in the GND connection is recommended). See also
V
ON(CL)
in table of protection functions and
circuit diagram page 9.
7
)
Add
I
ST
, if
I
ST
> 0, add
I
IN
, if
V
IN
>5.5 V
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