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參數(shù)資料
| 型號： | Q67060-S6700-A2 |
| 廠商： | SIEMENS AG |
| 英文描述： | Smart Lowside Power Switch |
| 中文描述： | 智能Lowside電源開關(guān) |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 193K |
| 代理商： | Q67060-S6700-A2 |
14.07.1998
Semiconductor Group
Page 4
BTS 917
Electrical Characteristics
Parameter
at T
j
=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V, V
DS
= 12 V
Current limit
1)
V
IN
= 10 V, V
DS
= 12 V, t
m
= 350 μs,
T
j
= -40...+150 °C, without R
CC
V
IN
= 10 V, V
DS
= 12 V, t
m
= 350 μs,
T
j
= -40...+150 °C, R
CC
= 0
Symbol
Values
typ.
Unit
min.
max.
I
D(SCp)
-
80
-
A
I
D(lim)
1.5
35
2.5
45
6
55
Dynamic Characteristics
μs
t
on
Turn-on time V
IN
to 90% I
D
:
R
L
= 4,7
, V
IN
= 0 to 10 V, V
bb
= 12 V
Turn-off time V
IN
to 10% I
D
:
R
L
= 4,7
, V
IN
= 10 to 0 V, V
bb
= 12 V
Slew rate on 70 to 50% V
bb
:
R
L
= 4,7
, V
IN
= 0 to 10 V, V
bb
= 12 V
Slew rate off 50 to 70% V
bb
:
R
L
= 4,7
, V
IN
= 10 to 0 V, V
bb
= 12 V
40
70
-
-
t
off
70
150
V/μs
-dV
DS
/dt
on
3
1
-
1
3
dV
DS
/dt
off
-
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
D
= 3.5 A, T
j
= 25 °C, V
bb
= 32 V
I
D
= 3.5 A, T
j
= 150 °C, V
bb
= 32 V
T
jt
E
AS
°C
mJ
165
-
-
-
-
-
150
1000
225
Inverse Diode
Inverse diode forward voltage
I
F
= 5*3.5A, t
m
= 300
μ
s, V
IN
= 0 V
V
SD
1
-
-
V
1
Device switched on into existing short circuit (see diagram Determination of ID(lim). Dependant on the application, these values
might be exceeded for max. 50 μs in case of short circuit occurs while the device is on condition
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