- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361235 > Q67100-H3519 (SIEMENS AG) 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode PDF資料下載
參數(shù)資料
| 型號(hào)： | Q67100-H3519 |
| 廠商： | SIEMENS AG |
| 英文描述： | 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| 中文描述： | 8 / 16千位二千〇四十八分之一千〇二十四× 8位串行CMOS EEPROM的，I2C同步2線巴士，頁(yè)面保護(hù)模式 |
| 文件頁(yè)數(shù)： | 13/53頁(yè) |
| 文件大小： | 418K |
| 代理商： | Q67100-H3519 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)當(dāng)前第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
13
12.99
command is necessary. A minimum
t
RC
time is required between two automatic refreshes in a burst
refresh mode. The same rule applies to any access command after the automatic refresh operation.
The chip has an on-chip timer and the Self Refresh mode is available. It enters the mode when RAS,
CAS, and CKE are low and WE is high at a clock timing. All of external control signals including the
clock are disabled. Returning CKE to high enables the clock and initiates the refresh exit operation.
After the exit command, at least one
t
RC
delay is required prior to any access command.
DQM Function
DQM has two functions for data I/O read and write operations. During reads, when it turns to “high”
at a clock timing, data outputs are disabled and become high impedance after two clock delay (DQM
Data Disable Latency
t
DQZ
). It also provides a data mask function for writes. When DQM is activated,
the write operation at the next clock is prohibited (DQM Write Mask Latency
t
DQW
= zero clocks).
Suspend Mode
During normal access mode, CKE is held high enabling the clock. When CKE is low, it freezes the
internal clock and extends data read and write operations. One clock delay is required for mode
entry and exit (Clock Suspend Latency
t
CSL
).
Power Down
In order to reduce standby power consumption, a power down mode is available. All banks must be
precharged and the necessary Precharge delay (
t
RP
) must occur before the SDRAM can enter the
Power Down mode. Once the Power Down mode is initiated by holding CKE low, all of the receiver
circuits except CLK and CKE are gated off. The Power Down mode does not perform any refresh
operations, therefore the device can’t remain in Power Down mode longer than the Refresh period
(
t
REF
) of the device. Exit from this mode is performed by taking CKE “high”. One clock delay is
required for mode entry and exit.
Auto Precharge
Two methods are available to precharge SDRAMs. In an automatic precharge mode, the CAS
timing accepts one extra address, CA10, to determine whether the chip restores or not after the
operation. If CA10 is high when a Read Command is issued, the
Read with Auto-Precharge
function is initiated. If CA10 is high when a Write Command is issued, the
Write with Auto-
Precharge
function is initiated. The SDRAM automatically enters the precharge operation two
clocks after the last data in.
Precharge Command
There is also a separate precharge command available. When RAS and WE are low and CAS is
high at a clock timing, it triggers the precharge operation. Three address bits, BA0, BA1 and A10 are
used to define banks as shown in the following list. The precharge command can be imposed one
clock before the last data out for CAS latency = 2 and two clocks before the last data out for CAS
latency = 3. Writes require a time delay
t
WR
from the last data out to apply the precharge command.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q67100-H3520 | 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3521 | 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3522 | 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3523 | 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3524 | 8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q67100-H3520 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3521 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3522 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3523 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3524 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:8/16 Kbit 1024/2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。