- 您現在的位置：買賣IC網 > PDF目錄361235 > Q67100-Q749 (SIEMENS AG) 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM PDF資料下載
參數資料
| 型號： | Q67100-Q749 |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| 中文描述： | 100萬× 4位動態隨機存儲器的低功耗100萬× 4位動態隨機存儲器 |
| 文件頁數： | 13/53頁 |
| 文件大?。?/td> | 418K |
| 代理商： | Q67100-Q749 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁當前第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
13
12.99
command is necessary. A minimum
t
RC
time is required between two automatic refreshes in a burst
refresh mode. The same rule applies to any access command after the automatic refresh operation.
The chip has an on-chip timer and the Self Refresh mode is available. It enters the mode when RAS,
CAS, and CKE are low and WE is high at a clock timing. All of external control signals including the
clock are disabled. Returning CKE to high enables the clock and initiates the refresh exit operation.
After the exit command, at least one
t
RC
delay is required prior to any access command.
DQM Function
DQM has two functions for data I/O read and write operations. During reads, when it turns to “high”
at a clock timing, data outputs are disabled and become high impedance after two clock delay (DQM
Data Disable Latency
t
DQZ
). It also provides a data mask function for writes. When DQM is activated,
the write operation at the next clock is prohibited (DQM Write Mask Latency
t
DQW
= zero clocks).
Suspend Mode
During normal access mode, CKE is held high enabling the clock. When CKE is low, it freezes the
internal clock and extends data read and write operations. One clock delay is required for mode
entry and exit (Clock Suspend Latency
t
CSL
).
Power Down
In order to reduce standby power consumption, a power down mode is available. All banks must be
precharged and the necessary Precharge delay (
t
RP
) must occur before the SDRAM can enter the
Power Down mode. Once the Power Down mode is initiated by holding CKE low, all of the receiver
circuits except CLK and CKE are gated off. The Power Down mode does not perform any refresh
operations, therefore the device can’t remain in Power Down mode longer than the Refresh period
(
t
REF
) of the device. Exit from this mode is performed by taking CKE “high”. One clock delay is
required for mode entry and exit.
Auto Precharge
Two methods are available to precharge SDRAMs. In an automatic precharge mode, the CAS
timing accepts one extra address, CA10, to determine whether the chip restores or not after the
operation. If CA10 is high when a Read Command is issued, the
Read with Auto-Precharge
function is initiated. If CA10 is high when a Write Command is issued, the
Write with Auto-
Precharge
function is initiated. The SDRAM automatically enters the precharge operation two
clocks after the last data in.
Precharge Command
There is also a separate precharge command available. When RAS and WE are low and CAS is
high at a clock timing, it triggers the precharge operation. Three address bits, BA0, BA1 and A10 are
used to define banks as shown in the following list. The precharge command can be imposed one
clock before the last data out for CAS latency = 2 and two clocks before the last data out for CAS
latency = 3. Writes require a time delay
t
WR
from the last data out to apply the precharge command.
相關PDF資料 |
PDF描述 |
|---|---|
| Q67100-H3500 | 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus |
| Q67100-H3501 | 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus |
| Q67100-H3502 | 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3503 | 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| Q67100-H3504 | 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| Q67100-Q750 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| Q67100-Q751 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| Q67100-Q756 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
| Q67100-Q757 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
| Q67100-Q758 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
發布緊急采購，3分鐘左右您將得到回復。